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IA0503 L6562D CMT07N60 AD7766 7006A MAX9940 QEN05BNA FD400
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For diod Found Datasheets File :: 977    Search Time::2.984ms    
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    FDPF19N40

Fairchild Semiconductor
Part No. FDPF19N40
OCR Text ... characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp19n40 fdp19n40 to-220 - - 50 fdpf19n40 fdpf19n40 to-220f - - 50 symbol parameter test conditions min. typ. max. units bv d...
Description N-Channel MOSFET

File Size 290.33K  /  9 Page

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    FDMC15N06

Fairchild Semiconductor
Part No. FDMC15N06
OCR Text ... characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdmc15n06 fdmc15n06 power 33 13" 12mm 3000 units symbol parameter test conditions min. typ. max. units bv dss drain to source...
Description N-Channel MOSFET 55V, 15A, 0.090Ω

File Size 564.74K  /  8 Page

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    FMH07N90E

Fuji Electric
Part No. FMH07N90E
OCR Text ... ris t ics o f re v e rse diod e i f = f ( v sd) : 80 s p u lse test , t c h = 25 c 1 0 - 1 1 0 0 1 0 1 1 0 2 1 0 0 1 0 1 1 0 2 1 0 3 t y p i c a l s w itc h i ng c h a r a c teri s t i c s v s . i d t = f ( i d):...
Description N-CHANNEL SILICON POWER MOSFET

File Size 423.17K  /  5 Page

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    Vincotech GmbH
Part No. V23990-P430-F-PM
OCR Text ...= f (rgon) output inverter fred diod e di0/dt,direc/dt = f (rgon) tj = 125 c tj = 125 c v r = 600 v v r = 600 v i f = 50 a i f = 50 a v ge = 15 v v ge = 15 v 0 0,02 0,04 0,06 0,08 0,1 0 1 02 03 04 05 0 r gon ( ) t rr ( s) 0 25 50 75 1...
Description
File Size 176.59K  /  8 Page

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    江苏长电科技股份有限公司
Jiangsu Changjiang Electronics Technology Co., Ltd.
Part No. 1SS400G-SOD-723
OCR Text ...400g high s peed switching diod es sod-723 f e a t u r e s small surface mounting type high s peed high reliability with high sur ge current handing cap abili...
Description High Speed SWITCHING diodes 高速开关二极管

File Size 34.39K  /  1 Page

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    FDA24N50F

Fairchild Semiconductor
Part No. FDA24N50F
OCR Text ... characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fda24n50f fda24n50f to-3pn - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown volt...
Description N-Channel MOSFET 500V, 24A, 0.2Ω

File Size 626.51K  /  8 Page

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    FDA2712

Fairchild Semiconductor
Part No. FDA2712
OCR Text ... characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fda2712 fda2712 to-3pn n/a n/a 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown volt...
Description N-Channel UltraFET Trench MOSFET 250V, 64A, 34mOhms
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ

File Size 314.03K  /  8 Page

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