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die-9 Datasheet PDF File

For die-9 Found Datasheets File :: 37099 Search Time::1.281ms
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				International Rectifier
Part No.	IRF1407
OCR Text	....) G from package and center of die contact S VGS = 0V VDS = 25V = 1.0KHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0KHz VGS = 0V, VDS = 60V, ...9.0 11.0 13.0 0.0 -60 -40 -20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 VGS, Gate-to-S...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				International Rectifier Seme LAB
Part No.	IRF140SMD
OCR Text	...ce (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction te...
Description	N-CHANNEL POWER MOSFET
File Size	22.30K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150SMD
OCR Text	...ce (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction te...
Description	N-CHANNEL POWER MOSFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	...m package 7.5 --- and center of die contact S 7750 --- VGS = 0V 1230 --- pF VDS = 25V 310 --- = 1.0MHz, See Fig. 5 5770 --- VGS = 0V, VDS =...9.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source ...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	... from package --- and center of die contact S --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, V DS = 1.0V, = 1.0MHz -...9.0 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100120140160180200220 VGS , Gate-to-Source Vol...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	...al characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices...9 13 23 19 310 130 55 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	... from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --...9.0 10.0 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Vol...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...and Gate Pins and the Center of Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET S...9 6 VGS = 6V 3 VGS = 4V 0 0 25 50 75 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 125 VGS = 5V IRF234,...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...ce (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction te...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...and Gate Pins and the Center of Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET S...9 6 3 0 0 50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

For die-9 Found Datasheets File :: 37099 Search Time::1.281ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |