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Part No.	RTAX1000SL-1CQ352EV RTAX2000S-1LG1152EV
OCR Text	...approximately half the standby current of the standard rtax-s device at worst-case conditions leading-edge performance ? high-performance ...extended flow table 3 ? actel extended flow for rtax-s/sl 1, 2, 3, 4 step screen method requirement ...
Description	FPGA, 12096 CLBS, 1000000 GATES, CQFP352 FPGA, 21504 CLBS, 2000000 GATES, CBGA1152
File Size	6,007.68K / 198 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd. HANBIT[Hanbit Electronics Co.,Ltd] HANBiT Electronics Co., Ltd.
Part No.	HFDOM-40LX HFDOM-40LX256 DOM40LX128 DOM40LX192 DOM40LX256 HFDOM-40LX128 HFDOM-40LX192
OCR Text	...Leakage Output Capacitance Read current Write current Sleep current Symbol Vdd Vil Vih Vol Voh Il Cout Irc Iwr Isc Min 3.15 -0.5 2.0 2.4 -5 ...extended partition and additional logical drives as necessary, until all the space on your new hard ...
Description	40Pin Flash Disk Module for 128MB,192M, 256M, True IDE Interface Mode, 5.0V 40Pin28MB的闪存，192M，有256M的磁盘模块，真正的IDE接口模式.0V
File Size	107.26K / 10 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,... HANBiT Electronics Co., Ltd. HANBIT[Hanbit Electronics Co.,Ltd] Hanbit Electronics Co.,Ltd.
Part No.	HFDOM-44LX HFDOM-44LX192 HFDOM-44LX256 DO44LX128 DO44LX192 DO44LX256 HFDOM-44LX128
OCR Text	...Leakage Output Capacitance Read current Write current Sleep current Symbol Vdd Vil Vih Vol Voh Il Cout Irc Iwr Isc Min 3.15 -0.5 2.0 2.4 -5 ...extended partition and additional logical drives as necessary, until all the space on your new hard ...
Description	44Pin Flash Disk Module for 128MB,192M, 256M, True IDE Interface Mode, 5.0V 44Pin28MB的闪存，192M，有256M的磁盘模块，真正的IDE接口模式.0V
File Size	114.37K / 10 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4M281633H K4M281633H-RF1H K4M281633H-RF1L K4M281633H-RF75 K4M281633H-RG1H K4M281633H-RG1L K4M281633H-RG75 K4M281633H-RL1H K4M281633H-RL1L K4M281633H-RL75 K4M281633H-RN1H K4M281633H-RN1L K4M281633H-RN75
OCR Text	...Power dissipation Short circuit current Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS Value -1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ +150 1.0 50 Mobile SDRAM...extended periods of time could affect device reliability. DC OPERATING CONDITIONS Recommended op...
Description	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
File Size	110.71K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL-6 KM416C254DJL-7 KM416V254DJL-5 KM416V254DJL-6 KM416V254DJL-7
OCR Text	...issipation Short Circuit Output current Symbol 3.3V VIN,VOUT VCC Tstg PD IOS -0.5 to +4.6 -0.5 to +4.6 -55 to +150 1 50 Rating CMOS DRAM ...extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referen...
Description	256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
File Size	839.35K / 36 Page	View it Online	Download Datasheet

				AMIC Technology Corporation Opto 22 AMIC Technology, Corp.
Part No.	A43P26161G-75 A43P26161G-75F A43P26161G-75U A43P26161G-95U A43P26161G-95UF A43P26161G-95F A43P26161G-75UF A43P26161V-75 A43P26161V-75U A43P26161V-75UF A43P26161V-75F A43P26161V-95 A43P26161V-95UF
OCR Text	.... . . . . . 0.8w short circuit current (ios) . . . . . . . . . . . . . . . . . . . . 50ma *comments permanent device damage may occur i...extended periods of time coul d affect device reliability. capacitance (t a =25 c, f=1mhz) ...
Description	OSC 3.3V SMT 7X5 CMOS CONNECTOR ACCESSORY 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM 100万16位4个银行的低功耗同步DRAM
File Size	1,128.28K / 44 Page	View it Online	Download Datasheet

				ETC Elite Semiconductor Memory Technology Inc.
Part No.	M11L416256SA-35JP M11L416256SA-35TG M11L416256SA
OCR Text	.........0.8W Short Circuit Output current ........................50mA M11L416256SA Permanent device damage may occur if "Absolute Maxim...extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING ...
Description	256 K x 16 DRAM EDO PAGE MODE
File Size	266.52K / 16 Page	View it Online	Download Datasheet

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