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  bvdss Datasheet PDF File

For bvdss Found Datasheets File :: 12476    Search Time::2.281ms    
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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...U.T. RG = 25 PG VGS = -20 0 V bvdss VDS 50 L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS VGS Wave Form 0 10 % VGS(on) 90 % IAS ID V...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ... VDS (V) 15 V -15 V bvdss IAR VDD VDS Waveform AS = ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e Test circuit RG = 25 W VDD = -50 V, L = 25.2 mH 5 2002-08-12 2SJ567 RESTRICTIONS ON PRODUCT USE 000707EAA...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)

File Size 237.21K  /  7 Page

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    2SJ610

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ610
OCR Text ...itial) Tch (C) 15 V -15 V bvdss IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = -50 V, L = 75 mH Wave form 5 2002-09-11 2SJ610 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is c...
Description Switching Regulator, DC-DC Converter and Motor Drive Applications

File Size 235.74K  /  7 Page

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    2SJ619

Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
Part No. 2SJ619
OCR Text ... VDS (V) 15 V -15 V bvdss IAR VDD VDS Test circuit RG = 25 W VDD = -25 V, L = 1.84 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-09 2SJ619 RESTRICTIONS ON PRODUCT USE 0007...
Description ZD-3.6V- 1 W
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications

File Size 216.16K  /  6 Page

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    2SJ620

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ620
OCR Text ... VDS (V) 15 V -15 V bvdss IAR VDD Test circuit Wave form AS = ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e VDS RG = 25 W VDD = -50 V, L = 3.56 mH 5 2002-09-11 2SJ620 RESTRICTIONS ON PRODUCT USE 00070...
Description Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)

File Size 221.26K  /  6 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ...U.T. RG = 25 PG. VGS = 20 0 V bvdss VDS VGS 0 50 L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD ID 90 % 90 % VGS VGS Wave Form 0 10 % VGS(on) 90 % IAS ID VDD ID ID Wave Form 0 10 % 10 % ...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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    APT12045L2VR

ADPOW[Advanced Power Technology]
Part No. APT12045L2VR
OCR Text ...CTRICAL CHARACTERISTICS Symbol bvdss ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1200 26 0.450 ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.91K  /  2 Page

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    DMN100 DMN100-7 DMN100-13

DIODES[Diodes Incorporated]
Part No. DMN100 DMN100-7 DMN100-13
OCR Text ...less otherwise specified Symbol bvdss @ Tj = 25C @ Tj = 125C IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss Qg Qgs Qgd tD(ON) tD(OFF) tr tf IS ISM VSD trr Min 30 3/4 3/4 1.0 3/4 1.3 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ...
Description 1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 62.71K  /  3 Page

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    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ...cs Symbol Off Characteristics bvdss bvdss / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: TC = 25C unless otherwise noted Parameter Drain-Sourc...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ...cs Symbol Off Characteristics bvdss bvdss / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: TC = 25C unless otherwise noted Parameter Drain-Sourc...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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For bvdss Found Datasheets File :: 12476    Search Time::2.281ms    
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