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  amperes 400 Datasheet PDF File

For amperes 400 Found Datasheets File :: 9597    Search Time::1.578ms    
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    LITE-ON SEMICONDUCTOR CORP
Part No. UF2004
OCR Text ...s forward current - 2.0 amperes semiconductor lite-on rev. 7, sep-2010, kdcd04 r 0ja r 0jl r 0jc rating and characteristic curves uf2001 thru uf2004 fig.1 - forward current derating curve average forward current a...
Description 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15

File Size 73.40K  /  3 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. PM300DSA060
OCR Text ... Phase IGBT Inverter Output 300 amperes/600 Volts A B G G J N T - DIA. (2 TYP.) 12345 N SIDE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO P ...400 2500 Units C C C in-lb in-lb Grams Volts Volts Control Sector Supply Voltage Applied between...
Description Intellimod⑩ Module Single Phase IGBT Inverter Output (300 amperes/600 Volts)
Intellimod Module Single Phase IGBT Inverter Output (300 amperes/600 Volts)

File Size 76.36K  /  6 Page

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    APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018JN
OCR Text ... 8, 10 & 15V ID, DRAIN CURRENT (amperes) ID, DRAIN CURRENT (amperes) 80 5.5V 60 5V 40 4.5V 20 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 100 TJ =...
Description POWER MOS IV 800V 40A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 60.06K  /  4 Page

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    IXFK360N15T2 IXFX360N15T2

IXYS Corporation
Part No. IXFK360N15T2 IXFX360N15T2
OCR Text ...acteristics @ T J = 25C ID - amperes 200 150 100 50 0 0.0 0.2 0.4 0.6 0.8 ID - amperes 6V 200 150 100 5V 5V 50 4V 0 ...400 350 25C Fig. 8. Transconductance TJ = - 40C 120 100 80 60 40 20 0 2.5 3.0 3.5 g f s - ...
Description GigaMOS TrenchT2 HiperFET Power MOSFET

File Size 175.70K  /  6 Page

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    IXFK320N17T2 IXFX320N17T2

IXYS Corporation
Part No. IXFK320N17T2 IXFX320N17T2
OCR Text ...acteristics @ T J = 25C ID - amperes 160 120 5.5V 80 40 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 5V ID - amperes 200 250 200 150...400 40 20 0 -50 VGS = 10V 180 160 Fig. 6. Drain Current vs. Case Temperature External Lead Cur...
Description GigaMOS TrenchT2 HiperFET Power MOSFET

File Size 180.50K  /  6 Page

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    FR607G FR605G

Galaxy Semi-Conductor Holdings Limited
Part No. FR607G FR605G
OCR Text ...URVE PEAK FORWARD SURGE CURRENT amperes FIG.3 --PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT amperes 8 7 6 5 4 3 2 1 0 0 25 5...400 300 TJ=125 8.3ms Single Half Sine-Wave 200 100 0 1 10 100 AMBIENT TEMPE...
Description GLASS PASSIVATED RECTIFIERS

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    FR607G FR605G

Daesan Electronics Corp.
Part No. FR607G FR605G
OCR Text ...ching capability CURRENT 6.0 amperes VOLTAGE 50 to 1000 Volts P-6 0.360(9.1) 0.340(8.6) DIA. 1.0(25.4) MIN. 0.360(9.1) 0.340(8....400 280 400 6.0 300 1.3 10 FR 605G 600 420 600 FR 606G 800 560 800 FR 607G 1000 700 1000...
Description CURRENT 6.0 amperes VOLTAGE 50 to 1000 Volts

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    MAC12N MAC12NG MAC12D MAC12DG MAC12MG MAC12M

http://
ONSEMI[ON Semiconductor]
Part No. MAC12N MAC12NG MAC12D MAC12DG MAC12MG MAC12M
OCR Text ...s On-State Current Rating of 12 amperes RMS at 70C Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 High Immunity to dv/dt -...400 thru 800 VOLTS MT2 G MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25C unless otherwise noted...
Description Triacs Silicon Bidirectional Thyristors

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    RS405 RS406 RS402 RS403 RS401

Changzhou Shunye Electronics Co.,Ltd.
Part No. RS405 RS406 RS402 RS403 RS401
OCR Text ...(18.5) Forward Current - 4.0 amperes FEATURES 0.580(14.7) 0.540(13.7) 0.640(16.3) 0.600(15.2) + AC - The plastic packa...400 280 400 4.0 3.0 150 93 1.0 600 420 600 800 560 800 1000 700 1000 IFSM I2t VF IR CJ R...
Description SILICON BRIDGE RECTIFIERS

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    ADPOW[Advanced Power Technology]
Part No. APT4020BVR
OCR Text ...V, 10V & 15V ID, DRAIN CURRENT (amperes) ID, DRAIN CURRENT (amperes) 40 6.5V 40 50 VGS=15V VGS=10V 7V 6.5V 30 6V 30 6V 20 5.5V ...400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D ...
Description POWER MOS V 400V 23A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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For amperes 400 Found Datasheets File :: 9597    Search Time::1.578ms    
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