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  8a 600v Datasheet PDF File

For 8a 600v Found Datasheets File :: 1191    Search Time::1.016ms    
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    IRG4BC10SD

International Rectifier
Part No. IRG4BC10SD
OCR Text ... 2.50 8 2.00 IC = 8a 4 1.50 IC = 4A 0 25 50 75 100 125 150 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) F...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 311.36K  /  10 Page

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    IRG4BC10SD-LPBF IRG4BC10SD-SPBF

International Rectifier
Part No. IRG4BC10SD-LPBF IRG4BC10SD-SPBF
OCR Text ... 2.50 8 2.00 IC = 8a 4 1.50 IC = 4A 0 25 50 75 100 125 150 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Co...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 310.57K  /  12 Page

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    IRAMX16UP60B IRAMX16UP60B-2

International Rectifier
Part No. IRAMX16UP60B IRAMX16UP60B-2
OCR Text ...IN=5V, IC=1.0mA (25C - 150C) IC=8a, VCC=15V IC=8a, VCC=15V, TJ=150C VIN=5V, V+=600v VIN=5V, V+=600v, TJ=150C IC=8a IC=8a, TJ=150C IF=1A IF=1A, TJ=125C TJ=25C TJ=25C TJ=-40C to 125C See Fig. 2 ICES A VFM V VBDFM RBR RBR/RBR IB...
Description Integrated Power Hybrid IC for Appliance Motor Drive Applications. 16A, 600v with Internal Shunt Resistor

File Size 239.13K  /  17 Page

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    STTA806D STTA806G

STMICROELECTRONICS
Part No. STTA806D STTA806G
OCR Text ...stic mains. description i f(av) 8a v rrm 600v t rr (typ) 25ns v f (max) 1.5v main products characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 600 v v rsm non repetitive peak reverse voltage 600 v i f(rms) rms ...
Description 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

File Size 271.79K  /  9 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4RC10S IRG4RC10 IRG4RC10STR IRG4RC10STRL IRG4RC10STRR
OCR Text ... 2.50 8 2.00 IC = 8a 4 1.50 IC = 4A 0 25 50 75 100 125 150 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Co...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) 绝缘栅双极晶体管(VCES和\u003d 600v电压的Vce(on)典\u003d 1.10V,@和VGE \u003d 15V的,集成电路\u003d 2.0安培
600v DC-1 kHz (Standard) Discrete IGBT in a D-Pak package

File Size 119.34K  /  8 Page

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    IRG4BC15UD-S

International Rectifier
Part No. IRG4BC15UD-S
OCR Text ... = 2.02v @v ge = 15v, i c = 7.8a thermal resistance ultrafast copack igbt benefits www.irf.com 1 ? ultrafast: optimized for high frequen...600v ??? ??? 1400 v ge = 0v, v ce = 600v, t j = 150 c v fm diode forward voltage drop ??? 1.5 1....
Description (IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR

File Size 236.83K  /  12 Page

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    IRG4BC15UD-SPBF

International Rectifier
Part No. IRG4BC15UD-SPBF
OCR Text ... = 2.02v @v ge = 15v, i c = 7.8a thermal resistance ultrafast copack igbt benefits www.irf.com 1 ultrafast: optimized for high freque...600v ??? ??? 1400 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ??? 1.5 1.8 ...
Description (IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR

File Size 340.96K  /  12 Page

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    ILA03N60 ILD03N60

INFINEON TECHNOLOGIES AG
Part No. ILA03N60 ILD03N60
OCR Text ... v ce(sat) v ge =10v, i c =0.8a t j =25 c t j =150 c - - 1.5 1.5 - - v ge =0v, i f =3.0a t j =25 c t j =150 c ...600v , v ge =0v t j =25 c t j =150 c - - 1 - 20 250 a gate-emitter leakage curre...
Description 3 A, 600 V, N-CHANNEL IGBT, TO-220AB
4.5 A, 600 V, N-CHANNEL IGBT, TO-252AA

File Size 327.18K  /  14 Page

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