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80a 40v Datasheet PDF File

For 80a 40v Found Datasheets File :: 289 Search Time::1.578ms
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				Advanced Power Electronics Corp.
Part No.	AP95T07GP
OCR Text	...T BVDSS RDS(ON) ID 75V 5m 80a Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast ...40v VGS=10V VDS=40v ID=80a RG=3.3,VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Lea...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	134.63K / 5 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STB80NF55L-08 STP80NF55L-08
OCR Text	80a - TO-220/D2PAK STripFETTM II POWER MOSFET PRELIMINARY DATA TYPE STP80NF55L-08 STB80NF55L-08 s s s VDSS 55 V 55 V RDS(on) 0.008 0...40v Tj TJMAX. (3) Starting Tj=25C, ID=40A, VDD=40v Unit V V V A A A W W/C V/ns mJ C C (q) Pul...
Description	N-CHANNEL 55V - 0.0065ohm - 80a - TO-220/D2PAK STripFETII POWER MOSFET N-CHANNEL 55V - 0.0065ohm - 80a - TO-220/D2PAK STripFET II POWER MOSFET N-CHANNEL 55V - 0.0065 OHM - 80a TO-220 D2PAK STRIPFET II POWER MOSFET N-CHANNEL 55V - 0.0065ohm - 80a - TO-220/D2PAK STripFET⑩ II POWER MOSFET
File Size	319.04K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDB024N04AL7
OCR Text	... ( typ.)@ v gs = 10v, i d = 80a ? fast switching speed ? low gate charge ? high performance trench te chnology for extremely low r ds(o...40v, r g = 25 , starting t j = 25 c 3. i sd 80a, di/dt 200a/ s, v dd bv dss , starti...
Description	N-Channel Power Trench MOSFET 40v, 219A, 2.4mOhms FDB024N04AL7 N-Channel PowerTrench? MOSFET
File Size	335.69K / 9 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	80N08
OCR Text	...C, VGS=10 V (Note 2) TC=25 C ID=80a UNIT A A mJ V W C C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL JA JC RATINGS...40v, RG=2.2 Rise Time tR 50 ID=80a, VGS=10V Turn-OFF Delay Time tD(OFF) 61 Fall-Time tF 30 SOURCE- D...
Description	N-CHANNEL 80V (D-S) MOSFET
File Size	154.48K / 3 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPI80N08S2-07R
OCR Text	...jmax 2) Reverse diode dv/dt IS=80a, VDS=60V, di/dt=200A/s, T jmax=175C Gate source voltage Power dissipation TC=25C Operating and st...40v, VGS =10V, ID =80a, RG =2.4 - 21 61 138 4.7 28 92 185 - nC V(plateau) VDD =60V, I...
Description	Low Voltage MOSFETs - TO262; 80 A; 75V; NL; 7.3 mOhm; integrated Rg OptiMOS Power-Transistor
File Size	324.92K / 8 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	80N08G-TA3-R 80N08L-TA3-R
OCR Text	...C, VGS=10 V (Note 2) TC=25 C ID=80a UNIT A A mJ V W C C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL JA JC RATINGS...40v, RG=2.2 Rise Time tR 50 ID=80a, VGS=10V Turn-OFF Delay Time tD(OFF) 61 Fall-Time tF 30 SOURCE- D...
Description	N-CHANNEL 80V (D-S) MOSFET N-CHANNEL 80V (D-S) MOSFET
File Size	131.69K / 3 Page	View it Online	Download Datasheet

				STMICROELECTRONICS ST Microelectronics
Part No.	STB80NF55L-08-1 STB80NF55L-08T4 STMICROELECTRONICS-STB80NF55L-08
OCR Text	80a - TO-220/D2PAK/I2PAK STripFETTM II POWER MOSFET PRELIMINARY DATA TYPE STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 s s s VDSS 55 V 5...40v Tj TJMAX. (3) Starting Tj= 25C, ID= 40A, VDD= 40v Unit V V V A A A W W/C V/ns mJ C C ( ) ...
Description	80 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA N-CHANNEL 55V - 0.0065 OHM - 80a TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET
File Size	193.76K / 9 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4
OCR Text	...jmax 2) Reverse diode dv/dt IS=80a, VDS=32V, di/dt=200A/s, T jmax=175C kV/s V W C Gate source voltage Power dissipation TC=25C Op...40v, VGS=0V, Tj=25C V DS=40v, VGS=0V, Tj=125C 2) A 0.01 1 1 3.4 1 100 100 4 nA m Gate-source l...
Description	OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - TO220/262/263; 80a; 40v; NL; 4mOhm
File Size	415.24K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPI80N04S2-04 SPP80N04S2-04 SPB80N04S2-04
OCR Text	...lanche energy, single pulse ID=80a, VDD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80a, VDS=32...40v, V GS=0V, Tj=25C V DS=40v, V GS=0V, Tj=125C2) A 0.01 1 1 1 100 100 nA m 3 2.7 3.7 3.4 Gate...
Description	OptiMOS Power-Transistor 的OptiMOS功率晶体
File Size	267.15K / 8 Page	View it Online	Download Datasheet

				SYNC POWER Crop.
Part No.	SPN8080 SPN8080T220TGB
OCR Text	...h-side switching . FEATURES 80V/80a,RDS(ON)= 4.7m@VGS= 10V 80V/37A,RDS(ON)= 8.7m@VGS= 6V Super high density cell design for extremely low RD...40v,RL=20 ID37A,VGEN=10V RG=3.3 VDS=25VGS=0V f=1MHz VDS=0V,VGS=20V VDS=80V,VGS=0V VDS=80V,VGS=0V TJ ...
Description	N-Channel Enhancement Mode MOSFET
File Size	231.76K / 10 Page	View it Online	Download Datasheet

For 80a 40v Found Datasheets File :: 289 Search Time::1.578ms
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