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  8-12ghz Datasheet PDF File

For 8-12ghz Found Datasheets File :: 363    Search Time::2.375ms    
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    MGF4931AM

Mitsubishi Electric Semiconductor
Part No. MGF4931AM
OCR Text ...----11.5 0.6 MAX -50 60 -1.5 -0.8 Unit V A mA V dB dB MITSUBISHI (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FE...12GHz, VDS=2V) 2.2 2 15 14 Noise Figure, NF (dB) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5...
Description SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)

File Size 48.11K  /  5 Page

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    MGF4851A

Mitsubishi Electric Semiconductor
Part No. MGF4851A
OCR Text ...-5 35 -0.1 12 9 Limits TYP. -8 60 -0.8 14.5 11 MAX -120 -2.0 --- Unit V mA V dBm dB MITSUBISHI (1/5) June/2004 June/2004 MI...12GHz Output Power Po (dBm) 15.00 Output Power Pout (dBm) VDS=2.5V ID=25mA f=12GHz 15...
Description SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

File Size 133.53K  /  5 Page

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    MGF4954A MGF4953A

Mitsubishi Electric Semiconductor
Part No. MGF4954A MGF4953A
OCR Text ...ETERS Freq (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) 0.911 0.894 0.875 0.858 0.830 0.797 0.770 0.751 0.727 0.713 0.686 0.636 0.590 0.538 0.507 0.506 0.552 0.625 0.696 0.745 0.791 0.794 0.776 0.802...
Description SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

File Size 203.88K  /  5 Page

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    MGF1952A

Mitsubishi Electric Semiconductor
Part No. MGF1952A
OCR Text ...rature (Ta=25C ) Ratings -8 -8 240 600 125 -65 to +125 (Ta=25C ) Unit V V mA mW C C ELECTRICAL CHARACTERISTICS Synbol V(BR)GDO...12GHz VDS=3V,ID=60mA f=12GHz,Pin=-5dBm -8 65 -0.3 15 5 Limits TYP. -15 120 -1.4 17 7 MAX -240 -3....
Description Microwave Power MES FET (Leadless Ceramic Package)

File Size 147.20K  /  5 Page

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    MGF4934AM

Mitsubishi Electric Semiconductor
Part No. MGF4934AM
OCR Text ...V) NF & Gs vs. ID 2.2 2.0 1.8 (f=12GHz, VDS=2V) 15 14 13 12 11 10 9 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 20 NF 8 7 6 5 4 Drain Current, ID (mA) MITSUBISHI (3/5) Associated Gain, Gs (dB) Gs Noise Fig...
Description SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)

File Size 104.87K  /  5 Page

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    SIRENZA[SIRENZA MICRODEVICES]
Part No. SPF-2000
OCR Text ...1 7 11 0 25 17 20 140 -0 .5 -8 -8 S 21 N F M IN P 1dB In s e rti o n G a i n [2 ] ZS = Z L = 5 0 O hm s Z S = G a m m a -o p t, Z L = Z L * M inim um N o is e F ig ure O u tp u t 1 d B C o m p re s s i o n P o i n t ...
Description Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation

File Size 254.56K  /  3 Page

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    THN6201S

Tachyonics CO,. LTD
Part No. THN6201S
OCR Text ...=2GHz VCE=3V, Ic=5mA,f=1GHz 7.5 8.5 16 16.5 dB VCE=3V, Ic=5mA,f=2GHz 10.5 11 1.1 dB VCE=3V, Ic=5mA,f=2GHz VCE=3V, Ic=5mA,f=1GHz 1.5 0.06 0.04 14 15.5 dB VCE=3V, Ic=5mA,f=2GHz VCE=3V, Ic=15mA,f=2GHz 9.5 10.5 10 dBm U MSG Maximum Stable...
Description NPN Planer RF TRANSISTOR

File Size 138.22K  /  12 Page

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    Mitsubishi Electric Sem...
Part No. MGF1953A
OCR Text ... VGS=0V DRAIN CURRENTID(mA) 8.0 9.0 10.0 DRAIN CURRENT ID(mA) 150 100 50 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 DRAIN TO SOURCE VOLTAGE VDS(V) GATE ...
Description Microwave Power MES FET

File Size 140.59K  /  5 Page

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    FHX06X FHX04X FHX05X

Eudyna Devices Inc
Fujitsu Media Devices Limited
Part No. FHX06X FHX04X FHX05X
OCR Text ...sociated Gain (dB) 11 10 9 1 NF 8 7 0 10 20 Drain Current (mA) 30 Output Power (dBm) OUTPUT POWER vs. INPUT POWER f=12GHz VDS=2V 10 Noise Figure Matched IDS=10mA Gain Matched IDS=15mA 5 0 -10 -5 0 5 Input Power (dBm...
Description KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
GaAs FET & HEMT Chips

File Size 52.84K  /  4 Page

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For 8-12ghz Found Datasheets File :: 363    Search Time::2.375ms    
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