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XO9505 28501 XO9505 2B455 37004 D5SB20 625ET ENA0975B
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    DPX202750DT-4058A1

TDK Electronics
Part No. DPX202750DT-4058A1
OCR Text ... terminal functions 0.2750.10 0.600.10 0.350.10 0.300.10 0.650.10 0.60 0.275 0.30 dimensions in mm 0.35 rohs directive compliant product: see the following for more details related to rohs directive compliant products. http://produ ct.tdk.c...
Description Multilayer Diplexer

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    MEMS

STMicroelectronics
Part No. MEMS
OCR Text ...plastic) 1.64 to 3.6 63 -26 120 600 mp34dt01-m top 3 x 4 x 1 .06 (metal) 1.64 to 3.6 61 -26 120 600 mp34dt02 top 3 x 4 x 1.06 (metal) 1.64 t...650 mp34db02 bottom 3 x 4 x 1 (metal) 1.64 to 3.6 62.6 -26 120 650 evaluation boards are available...
Description analog and digital

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    ST Microelectronics
Part No. L6385ED013TR
OCR Text ...tures ? high voltage rail up to 600 v ? dv/dt immunity 50 v/nsec in full temperature range ? driver current capability: ? 400 ma source ? 650 ma sink ? switching times 50/30 nsec rise/fall with 1 nf load ? cmos/ttl schmitt trigger input...
Description HV high and low side driver with embedded bootstrap diode

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    6N60L-BTA3-R 6N60-BTA3-R 6N60L-BTA3-T 6N60-BTA3-T 6N60L-ATA3-R 6N60-ATA3-R 6N60L-ATA3-T 6N60-ATA3-T 6N60

Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
Part No. 6N60L-BTA3-R 6N60-BTA3-R 6N60L-BTA3-T 6N60-BTA3-T 6N60L-ATA3-R 6N60-ATA3-R 6N60L-ATA3-T 6N60-ATA3-T 6N60
OCR Text 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charac...
Description 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 六点二安培,600/650伏特N通道MOSFET

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    A-POWER[Advanced Power Electronics Corp.]
Part No. AP03N70F
OCR Text ...MODE POWER MOSFET D BVDSS 600/650/700V RDS(ON) 3.6 3.3A ID G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220FM type provide high...
Description N-CHANNEL ENHANCEMENT MODE

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    Bourns Electronic Solut...
Part No. 2018-09 2018-15 2018-23 2018-35 2018-42 2018-50
OCR Text ... for 99 % of values 350 / <600 v 650 / <850 v 400 / <750 v 650 / <900 v 450 / <900 v 600 / <1000 v 600 / <1050 v 800 / <1250 v 700 / <1150 v 900 / <1400 v 800 / <1250 v 1000 / <1600 v insulatio...
Description Gas Discharge Tube Surge Arrestor with FLAT Technology

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    Infineon Technologies A...
Part No. PTVA047002EV-15
OCR Text ... 14 18 22 26 30 34 450 500 550 600 650 700 750 800 850 drain efficiency (%), gain (db) frequency (mhz) dvb - t performance drain efficiency, gain vs frequency v dd = 50 v, i dq = 1.2 a, p out = 135 w avg drain efficiency g...
Description Thermally-Enhanced High Power RF LDMOS FET

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    Bourns Electronic Solut...
Part No. 2018-09-SMH-RPLF 2018-23-SMH-RPLF 2018-35-SMH-RPLF 2018-50-SMH-RPLF 2018-XX-SMH-RPLF
OCR Text ... for 99 % of values 350 / <600 v 650 / <850 v 400 / <750 v 650 / <900 v 450 / <900 v 600 / <1000 v 600 / <1050 v 800 / <1250 v 700 / <1150 v 900 / <1400 v 800 / <1250 v 1000 / <1600 v insu...
Description Gas Discharge Tube Surge Arrestor with FLAT Technology

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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. AP03N70P 03N70P
OCR Text ...NT MODE POWER MOSFET D BVDSS 600/650/700V RDS(ON) ID 3.6 3.3A Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220 type provide high blocking...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 80.93K  /  6 Page

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