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  50ns-trr Datasheet PDF File

For 50ns-trr Found Datasheets File :: 234    Search Time::1.516ms    
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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. 10ETF06 10ETF02 10ETF04
OCR Text 50ns VRRM 200 to 600V Description/Features The 10ETF.. fast soft recovery QUIETIR rectifier series has been optimized for combined shor...trr TJ @ 10 A, TJ = 25C @ 1A, 100A/s Package Outline Units A V A V ns C 10ETF.. 10 200 to 60...
Description FAST SOFT RECOVERY RECTIFIER DIODE 快速软恢复整流二极
200V Fast Recovery Diode in a TO-220AC package
400V Fast Recovery Diode in a TO-220AC package
600V Fast Recovery Diode in a TO-220AC package

File Size 216.61K  /  7 Page

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    HFA135NH40

International Rectifier
Part No. HFA135NH40
OCR Text ...C IRRM(typ.) = 7.5A trr(typ.) = 50ns di(rec)M/dt (typ.)= 270A/s Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior f...
Description HEXFREDTM Ultrafast, Soft Recovery Diode

File Size 256.64K  /  5 Page

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    VISAY[Vishay Siliconix]
Part No. MURS360 MURS350 MURS340
OCR Text ...rent 3.0A Reverse Recovery Time 50ns Ultrafast Rectifiers DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.126 (3.20) 0.114 (2.90)...trr trr tfr 1.25 1.28 1.05 10 250 50 75 25 V A ns ns ns Maximum instantaneous reverse curre...
Description (MURS340 - MURS360) Ultrafast Rectifiers
From old datasheet system

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    HFA135NH40R

International Rectifier
Part No. HFA135NH40R
OCR Text ... IRRM (typ.) = 7.5A trr(typ.) = 50ns di(rec)M/dt (typ.) = 270A/s Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior ...
Description HEXFREDTM Ultrafast, Soft Recovery Diode

File Size 256.86K  /  5 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. IDW100E60
OCR Text ... 100ns TJ=25C TJ=25C 50ns 0ns 500A/s 1000A/s 1500A/s 1000A/s 1500A/s diF/dt, DIODE CURRENT SLOPE Figure 5. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=100A, Dynamic test circu...
Description Fast Switching EmCon Diode

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    HFA160MD40C

International Rectifier
Part No. HFA160MD40C
OCR Text ...C IRRM(typ.) = 7.1A trr(typ.) = 50ns di(rec)M/dt (typ.) = 260A/s Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior ...
Description HEXFREDTM Ultrafast, Soft Recovery Diode

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    S1241 2594

International Rectifier
Part No. S1241 2594
OCR Text ...C IRRM(typ.) = 7.5A trr(typ.) = 50ns BASE COMMON CATHODE di(rec)M/dt (typ.)! = 270A/s Description/ Applications HEXFRED diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. An extensive c...
Description Ultrafast, Soft Recovery Diode
From old datasheet system

File Size 215.17K  /  6 Page

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    RUST2008 RUST2010

Electronic devices inc.
Part No. RUST2008 RUST2010
OCR Text 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 Volts 50ns ultra-fast recovery Small size Exceptionally low leakage ...Trr , Fig.4 Max. Forward Voltage Drop @ 100 mA, V F Max. DC Reverse Current @ PRV and 25 C, IR Max....
Description 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES

File Size 37.87K  /  2 Page

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    EGP20K EGP20 EGP20A EGP20B EGP20D EGP20F EGP20G EGP20J

Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
http://
Part No. EGP20K EGP20 EGP20A EGP20B EGP20D EGP20F EGP20G EGP20J
OCR Text ... 3.60 .90 --- NOTE Trr 50nS 75nS IF=0.5A, IR=1.0A, Irr=0.25A CJ 70pF 45pF Measured at 1.0MHz, VR=4.0V www.mccsemi.com EGP20A thru EGP20K Figure 1 Typical Forward Characteristics 20 10 6 4 2 Amps 1 .6 .4 1.0 .2 .1...
Description 2.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15

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    SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. SB120-18 2515
OCR Text ... reverse recovery time (trr max=50ns). * Low switching noise. * Low leakage current and high reliability due to highly reliable planar structure. A:Anode C:Cathode SANYO:TO-3PB Specifications Absolute Maximum Ratings at Ta = 25C Par...
Description 180V, 12A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
From old datasheet system

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