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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
CASD355SG
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| OCR Text |
...igh reliability High speed(trr<4ns)
Mechanical data:
Case: Molded plastic, JEDEC SOD-323 Terminals : Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band Mounting position: Any Weight: 0.0001... |
| Description |
100V/100mA SURFACE MOUNT SWITCHING DIODE
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| File Size |
143.58K /
3 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
RB215T-40_1 RB215T-40 RB215T-401
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| OCR Text |
...00 50
25 20 15 10 5 0 AVE:27.4ns
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm
1cyc 8.3ms
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
...trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000 Ifsm
100
30
IM=... |
| Description |
Schottky barrier diode
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| File Size |
191.16K /
4 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
RB205T-90
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| OCR Text |
...
250
25 20 15 10 5 0 AVE:12.4ns
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc 100
10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000
100
30
IM=100mA IF=7.5A
TRANSIENT TH... |
| Description |
Schottky barrier diode
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| File Size |
194.93K /
4 Page |
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it Online |
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http://
ROHM[Rohm]
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| Part No. |
RB160M-40_1 RB160M-40 RB160M-401
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| OCR Text |
...N MAP trr DISPERSION MAP AVE:10.4ns PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
100 80 60 40 Ifsm 20 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 8.3ms 1cyc
150
100
50
AVE:83.0A
... |
| Description |
Schottky barrier diode
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| File Size |
118.17K /
4 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
RB050PS-30
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| OCR Text |
...TIME:trr(ns)
30 25 20 AVE:20.4ns 15 10 5 0 trr DISPERSION MAP Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm
1cyc
100
10 1 10 NUM... |
| Description |
Schottky barrier diode
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| File Size |
205.54K /
4 Page |
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it Online |
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MCC[Micro Commercial Components]
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| Part No. |
MMBD4148
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| OCR Text |
...
Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 6V RL=100 *Pulse test: Pulse width 300 sec, Duty cycle 2%
CJ
2pF
.037 .950 .037 .950
www.mccsemi.com
MMBD4148
Figure 1 Typical Forward Characteristics 20 10 6 4 350 2 MilliAmp... |
| Description |
350mW 100 Volt Silicon Epitaxial Diode
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| File Size |
87.00K /
3 Page |
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it Online |
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MCC[Micro Commercial Components]
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| Part No. |
MMBD914
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| OCR Text |
...
Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 6V RL=100 *Pulse test: Pulse width 300 sec, Duty cycle 2%
CJ
2pF
.037 .950 .037 .950
www.mccsemi.com
MMBD914
MCC
10,000
IF, INSTANTANEOUS FORWARD CURRENT (mA)
1000
... |
| Description |
350mW 100 Volt Silicon Epitaxial Diode
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| File Size |
79.46K /
2 Page |
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it Online |
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
MDL914S2
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| OCR Text |
...ge * High switching speed: max. 4ns * Reverse voltage: max. 100V * Peak forward surge current: max. 500mA.
Applications
* High-speed swi...trr Conditions IR=100A IF=10mA VR=20V VR=75V VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=... |
| Description |
High -speed switching diode
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| File Size |
144.72K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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