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Apex Microtechnology Corporation
ETC[ETC]
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| Part No. |
PA12A PA12
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| OCR Text |
...74
2 10 30 20 12 50 10 12 50 200 3 VS -3 100
6 65 200 30 500 30
* *
1 * * * 10 * * 5 * * * * *
3 40 * 20 * 10
mV V/C V/V V/W nA pA/C pA/V nA pA/C M pF V dB
110 108 4 20 20
* *
* * * * *
dB dB MHz kHz V V V A s... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
106.17K /
4 Page |
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it Online |
Download Datasheet
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 SGB15N120 SGP15N120
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| OCR Text |
...
3.1 3.7 4 11
3.6 4.3 5 A 200 800 100 1500 120 80 175 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E =0V,V G E =2...125W 100W 75W 50W 25W 0W 25C 25A 20A 15A 10A 5A 0A 25C
50C
75C
100C
125C
IC, COLLECTO... |
| Description |
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技
IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
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| File Size |
448.47K /
12 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ355 C67078-S3107-A2
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| OCR Text |
...RGS = 50
Rise time
tr
130 200
VDD = 30 V, VGS = 10 V, ID = 2.1 A RGS = 50
Turn-off delay time
td(off)
400 530
VDD = 30 V, ...125W
l k i j hg f e
VGS [V] a 4.0
b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
RDS (on) 4... |
| Description |
SIPMOS ? Power Transistor
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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| File Size |
208.54K /
9 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SGW15N120
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| OCR Text |
...
3.1 3.7 4 11
3.6 4.3 5 A 200 800 100 1500 120 80 175 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E =0V,V G E =2...125W 100W 75W 50W 25W 0W 25C 25A 20A 15A 10A 5A 0A 25C
50C
75C
100C
125C
IC, COLLECTO... |
| Description |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
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| File Size |
341.89K /
12 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FS70UM-2
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| OCR Text |
...OWER DISSIPATION DERATING CURVE 200
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2
100ms 1ms...125W
30
40
5V
20
20
10
4V
0
0
0.4
0.8
1.2
1.6
2.0
0
0
... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
38.15K /
4 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BUZ358 C67078-S3111-A2
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| OCR Text |
...VGS
12
10 500 8 400 6 300 200 100 0 20 4 0,2 VDS max 0,8 VDS max
2 0 40 60 80 100 120 C 160 0 20 40 60 80 100 120 140 160 nC 200
Tj
Q Gate
Drain-source breakdown voltage V(BR)DSS = (Tj )
1200 V 1160
V(BR)DSS 1140
11... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS功率晶体管（N通道增强模式雪崩级）
SIPMOS ? Power Transistor
From old datasheet system
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| File Size |
68.39K /
8 Page |
View
it Online |
Download Datasheet |
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