| |
|
 |
IRF[International Rectifier]
|
| Part No. |
IRF7450_04 IRF7450PBF IRF745004 IRF7450PBF-15
|
| OCR Text |
...DS = 200V, VGS = 0V A 250 VDS = 160v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified...1.5a 39 ID = 1.5a 9.0 nC VDS = 160v 18 VGS = 10V, --- VDD = 100V --- ID = 1.5a ns --- RG = 6.0 --- V... |
| Description |
High frequency DC-DC converters SMPS MOSFET HEXFET Power MOSFET
|
| File Size |
173.00K /
8 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
SEMELAB LTD
|
| Part No. |
BUX20CECC BUX20-QR-B
|
| OCR Text |
160v 160v 125v 7v 50a 60a 10a 350w ?65 to 200c 200c document number 3246 issue 1 bux20 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves t... |
| Description |
50 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
| File Size |
53.65K /
3 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Advanced Power Electronics
|
| Part No. |
AP09N20H
|
| OCR Text |
...ge current (t j =150 o c) v ds =160v , v gs =0v - - 100 ua i gss gate-source leakage v gs =-- na q g total gate charge 3 i d =8.6a - 23 37...1.0mhz - 40 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forwa... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
| File Size |
98.58K /
4 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Advanced Power Electronics
|
| Part No. |
AP09N20BGS-HF
|
| OCR Text |
...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charg...1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forwa... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
| File Size |
83.45K /
4 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|