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  160v 1.5a Datasheet PDF File

For 160v 1.5a Found Datasheets File :: 766    Search Time::1.937ms    
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    JANSF2N7262 JANSG2N7262 IRHF4230

International Rectifier
Part No. JANSF2N7262 JANSG2N7262 IRHF4230
OCR Text ...age drain current ? ? 25 v ds = 160v,v gs =0v ? ? 250 v ds = 160v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs...1.0mhz c rss reverse transfer capacitance ? 55 ? na ? nh ns a note: corresponding spice and sa...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE

File Size 292.34K  /  12 Page

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    IRF[International Rectifier]
Part No. IRF7450_04 IRF7450PBF IRF745004 IRF7450PBF-15
OCR Text ...DS = 200V, VGS = 0V A 250 VDS = 160v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified...1.5a 39 ID = 1.5a 9.0 nC VDS = 160v 18 VGS = 10V, --- VDD = 100V --- ID = 1.5a ns --- RG = 6.0 --- V...
Description    High frequency DC-DC converters
SMPS MOSFET HEXFET Power MOSFET

File Size 173.00K  /  8 Page

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    IRHNA57260SE

International Rectifier
Part No. IRHNA57260SE
OCR Text ...age drain current ? ? 10 v ds = 160v ,v gs =0v ??25 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v g...1.0mhz c rss reverse transfer capacitance ? 65 ? na ? ? nh ns a thermal resistance parameter min ty...
Description 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package

File Size 123.40K  /  8 Page

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    2N7274D 2N7274D_2N7274R_2N7274H

Fairchild Semiconductor
Part No. 2N7274D 2N7274D_2N7274R_2N7274H
OCR Text ... -20V VDS = 200V, VGS = 0 VDS = 160v, VGS = 0 VDS = 160v, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 8A VGS = 10V, ID = 5A VDD = 100V, ...1 15 30 3 3 7 0.6 MAX 4.0 100 100 1 0.025 0.25 24 4.20 .50 30 130 ns Turn-Off Delay Time Fall Time G...
Description N-Channel Power MOSFETs
From old datasheet system

File Size 77.25K  /  6 Page

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    BUX20

Seme LAB
Part No. BUX20
OCR Text ...cbo collector ? base voltage 160v v cex collector ? emitter voltage v be = -1.5v 160v v ceo collector ? emitter voltage 125v v ebo emitter ? base voltage 7v i c continuous collector current 50a i cm peak collector...
Description SILICON MULTI-EPITAXIAL NPN TRANSISTOR

File Size 187.72K  /  3 Page

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    SEMELAB LTD
Part No. BUX20CECC BUX20-QR-B
OCR Text 160v 160v 125v 7v 50a 60a 10a 350w ?65 to 200c 200c document number 3246 issue 1 bux20 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves t...
Description 50 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-204AA

File Size 53.65K  /  3 Page

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    Advanced Power Electronics
Part No. AP09N20H
OCR Text ...ge current (t j =150 o c) v ds =160v , v gs =0v - - 100 ua i gss gate-source leakage v gs =-- na q g total gate charge 3 i d =8.6a - 23 37...1.0mhz - 40 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forwa...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 98.58K  /  4 Page

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    AP09N20BGS-HF AP09N20BGS-HF14 AP09N20BGS-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP09N20BGS-HF AP09N20BGS-HF14 AP09N20BGS-HF-14
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charg...1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forwa...
Description Simple Drive Requirement Lower Gate Charge

File Size 56.18K  /  4 Page

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    Advanced Power Electronics
Part No. AP09N20BGS-HF
OCR Text ...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charg...1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forwa...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 83.45K  /  4 Page

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