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  1600a Datasheet PDF File

For 1600a Found Datasheets File :: 223    Search Time::1.079ms    
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    DCR390J85 DCR390J80 DCR390J70

Dynex Semiconductor
Part No. DCR390J85 DCR390J80 DCR390J70
OCR Text ...ltage C high level 400a to 1600a at t case = 125c - 1.3063 v r t on - state slope resistance C low level 50a to 400a at t case = 125c - 3.153 m ? on - state slope resistance C high level 400a t...
Description Phase Control Thyristor

File Size 387.31K  /  10 Page

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    DIM200PHM33-F00011

Dynex Semiconductor
Part No. DIM200PHM33-F00011
OCR Text ...a v ce = 1800v di f /dt = 1600a/s 80 c i rr diode reverse recovery current 144 a e rec diode reverse recovery energy 75 mj t case = 125c unless stated otherwise symbol parameter test con...
Description Half Bridge IGBT Module

File Size 310.34K  /  8 Page

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    MG800J1US52A

Mitsubishi Electric Semiconductor
Toshiba Semiconductor
Part No. MG800J1US52A
OCR Text ...= 125C 8 8 6 6 4 1600a 2 800A IC = 400A 0 0 4 8 12 16 20 4 1600a 800A IC = 400A 2 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V) IC - VGE 1600 COLLECTOR CURR...
Description HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

File Size 116.79K  /  7 Page

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    DIM200PKM33-F00011 DIM200PKM33-F000-15

Dynex Semiconductor
Part No. DIM200PKM33-F00011 DIM200PKM33-F000-15
OCR Text ...a v ce = 1800v di f /dt = 1600a/s 80 c i rr diode reverse recovery current 144 a e rec diode reverse recovery energy 75 mj t case = 125c unless stated otherwise symbol parameter test con...
Description IGBT Chopper Module

File Size 309.68K  /  8 Page

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    DIM200PLM33-F00011

Dynex Semiconductor
Part No. DIM200PLM33-F00011
OCR Text ...a v ce = 1800v di f /dt = 1600a/s 80 c i rr diode reverse recovery current 144 a e rec diode reverse recovery energy 75 mj t case = 125c unless stated otherwise symbol parameter test con...
Description IGBT Chopper Module

File Size 309.86K  /  8 Page

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    Sanyo
Part No. 2SD1197
OCR Text ...VCE From top --2000A --1800A --1600a --1400A --1200A --1000A IC -- VCE 2SD1197 From top 2000A 1800A 1600a 1400A 2SB887 Collector Current, IC - A --6 Collector Current, IC - A --8 8 6 --4 --800A --600A --400A...
Description PNP/NPN Epitaxial Planar Silicon Darlington Transistors

File Size 43.14K  /  4 Page

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    DIM200PHM33-F000

DYNEX SEMICONDUCTOR LTD
Dynex Semiconductor, Ltd.
Part No. DIM200PHM33-F000
OCR Text ... Diode reverse current dIF/dt = 1600a/s Diode reverse recovery energy - 80 144 75 - C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Parameter Turn-off delay time Fall time Turn-off energy loss...
Description Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT

File Size 140.00K  /  9 Page

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    DIM200PLM33-F000

Dynex Semiconductor
Part No. DIM200PLM33-F000
OCR Text ...IF = 200A, VR = 1800V, dlF/dt = 1600a/s Diode arm Min. Typ. 1950 170 220 1180 225 5 290 80 144 75 Max. Units ns ns mJ ns ns C mJ C A mJ Tcase = 125 C unless stated otherwise. Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter T...
Description IGBT Chopper Module

File Size 231.11K  /  9 Page

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    SANYO SEMICONDUCTOR CO LTD
Part No. 2SD1196
OCR Text ...VCE From top --2000A --1800A --1600a --1400A --1200A --1000A --800A 2SB886 IC -- VCE 2SD1196 From top 2000A 1800A 1600a 1400A 1200A Collector Current, IC - A --6 Collector Current, IC - A 6 1000A 800A 600A --4 4 ...
Description 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
PNP/NPN Epitaxial Planar Silicon Darlington Transistors

File Size 49.55K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CM800HA-24H
OCR Text ...0 t j = 25? i c = 320a i c = 1600a i c = 800a 0 0.8 1.6 2.4 3.2 4.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 4 emitter current, i e , (amperes) t j = 25? 10 3 collector-e...
Description IGBT Modules:1200V

File Size 54.62K  /  4 Page

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For 1600a Found Datasheets File :: 223    Search Time::1.079ms    
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