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				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text	...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Timing Register Pro...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	107.58K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
OCR Text	...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Programming Registe...
Description	8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	111.68K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TP75
OCR Text	...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...Col. Buffer LRAS LCBR Latency & Burst Length LCKE LRAS LCBR LWE LCAS Programming Regi...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY 连接器附
File Size	46.28K / 9 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632D-L55 K4S281632D-L60 K4S281632D-L75 K4S281632D-L7C K4S281632D-NC1H K4S281632D-NC60 K4S281632D-NC75 K4S281632D-NC7C K4S281632D-NL1H K4S281632D-NL60 K4S281632D-NL75 K4S281632D-NL7C K4S281632D-TC K4S281632D-TC_L60 K4S281632D-TC75 K4S281632D-TL75 K4S281632D-TC_L1H K4S281632D-TC_L1L K4S281632D-TC_L55 K4S281632D-TC_L75 K4S281632D-TC_L7C K4S281632D-TC/L1H K4S281632D-TC/L1L K4S281632D-TC/L55 K4S281632D-TC/L60 K4S281632D-TC/L75 K4S281632D-TC/L7C K4S281632D-TL60 K4S281632D-TC7C K4S281632D-TL55 K4S281632D-TL7C
OCR Text	...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Programming Registe...
Description	128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
File Size	110.59K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL
OCR Text	...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Programming Registe...
Description	IC REG ULDO DUAL 2.8/1.5V 6-MLF 8Mx16 SDRAM 54CSP 2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
File Size	66.22K / 10 Page	View it Online	Download Datasheet

				ELAN Microelctronics Corp .
Part No.	EM91410
OCR Text	...y, each one can hold data up to 16 digits. ? a 32-digit lnb (last number) redial memory. ? keytone function provides rapidly keying recogni...col 2 col1 xin xout xmute vss hdo po row4 row3 row2 row1 hks vdd dtmf em91410ap 1 2 3 4 5 6 7 8 9 10...
Description	TONE/PULSE SWITCHABLE DIALER WITH LCD INTERFACE AND DUAL-TONE MELODY GENERATOR
File Size	167.73K / 24 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S560832A-TC_L75 K4S560832A-TC_L80 K4S560832A-TC/L80 K4S560832A-TC/L1H K4S560832A-TC/L1L K4S560832A-TC/L75
OCR Text	...3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 ...col. address delay Last data in to burst stop Col. address to col. address delay Number of valid out...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
File Size	125.57K / 10 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology Inc.
Part No.	M12S16161A-10T M12S16161A-10TG
OCR Text	... DESCRIPTION The M12S16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated...Col. Buffer Column Decoder Latency & Burst Length LCKE Programming Register LCBR LWE LCAS ...
Description	512K x 16Bit x 2Banks Synchronous DRAM
File Size	865.28K / 28 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology Inc.
Part No.	M52D16161A-10BG M52D16161A-10TG M52D16161A
OCR Text	... DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated...Col. Buffer Column Decoder Latency & Burst Length LCKE Programming Register LCBR LWE LCAS ...
Description	512K x 16Bit x 2Banks Synchronous DRAM
File Size	754.07K / 29 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology Inc.
Part No.	M52S16161A-10BG M52S16161A-10TG
OCR Text	... DESCRIPTION The M52S16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated...Col. Buffer Column Decoder Latency & Burst Length LCKE Programming Register LCBR LWE LCAS ...
Description	512K x 16Bit x 2Banks Synchronous DRAM
File Size	752.86K / 29 Page	View it Online	Download Datasheet

For 16-col Found Datasheets File :: 2653 Search Time::1.454ms
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