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12ns Datasheet PDF File

For 12ns Found Datasheets File :: 57+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 |

					Maxim Integrated Products Atmel, Corp. ON Semiconductor TE Connectivity, Ltd.
Part No.	MAX17605 MAX17601 MAX17603 MAX17600 MAX17602 CAT24WC03LE-1.8TE13 CAT25C03GYITE13 CAT24WC03GLITE13 CAT24WC03GWATE13 CAT25040YAT3 CAT25010YAT3 CAT93C86ZD4I-GT3 CAT93C86XET2 CAT93C86ZD4E-GT2 CAT25C05ZATE13 CAT24WC64XATE13B 33LIT3C
Description	4A Sink /Source Current, 12ns, Dual MOSFET Drivers 2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保 1K/2K/4K/8K/16K SPI Serial CMOS EEPROM 1K/2K/4K/8K/16K SPI 串行互补型金属氧化物电可擦可编程只读存储 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS 16K-Bit Microwire Serial EEPROM 16K的位微型导线串行EEPROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
File Size	1,698.26K / 12 Page	View it Online	Download Datasheet

					Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm MAXIM - Dallas Semiconductor
Part No.	MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MXD1013UA MXD1013UA___ MXD1013C_D___ MXD1013PA___ MXD1013PD___ MXD1013SA___ MXD1013SE___ MXD1013C-D MXD1013C_D MXD1013D MXD1013C/D MXD1013SE070 MXD1013SE075 MXD1013SE025 MXD1013SE050 MXD1013SE012 MXD1013SE020 MXD1013SE090 MXD1013SE080 MXD1013SE030 MXD1013SE015 MXD1013SE045
Description	3-in-1 silicon delay line. Output delay 45ns. 3-in-1 silicon delay line. Output delay 30ns. 3-in-1 silicon delay line. Output delay 90ns. 3-in-1 silicon delay line. Output delay 12ns. 3-in-1 silicon delay line. Output delay 25ns. Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No 3-in-1 silicon delay line. Output delay 70ns. 3-in-1 silicon delay line. Output delay 75ns. 3-in-1 silicon delay line. Output delay 50ns. 3-in-1 silicon delay line. Output delay 20ns. 3-in-1 silicon delay line. Output delay 80ns. 3-in-1 silicon delay line. Output delay 15ns.
File Size	56.97K / 6 Page	View it Online	Download Datasheet

					GSI Technology, Inc.
Part No.	GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32Q-4I GS820H32T-5I GS820H32Q-138I GS820H32T-138I
Description	100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
File Size	345.97K / 23 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM68257EI-10 KM68257EI-12 KM68257EI-15 KM68257ETGI-10 KM68257ETGI-12 KM68257ETG-15
Description	32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作 32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
File Size	165.73K / 8 Page	View it Online	Download Datasheet

					White Electronic Designs
Part No.	EDI8L32256V15AI EDI8L32256V12AC EDI8L32256V15AC EDI8L32256V17AC EDI8L32256V17AI
Description	15ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM 12ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM 17ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM
File Size	65.90K / 5 Page	View it Online	Download Datasheet

					GSI Technology, Inc.
Part No.	GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H32AT-138I GS820H32AQ-138 GS820H32AT-4I GS820H32AGT-5I GS820H32AT-6I GS820H32AQ-6 GS820H32AQ-150I GS820H32AQ-5I
Description	100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
File Size	345.69K / 23 Page	View it Online	Download Datasheet

					White Electronic Designs
Part No.	EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC EDI8L32128V15AI EDI8L32128V20AC EDI8L32128V20AI
Description	12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
File Size	57.39K / 5 Page	View it Online	Download Datasheet

					GSI Technology
Part No.	GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS840FH18AT-12I GS840FH18AT-8.5 GS840FH18AT-8.5I GS840FH18AT-8I GS840FH32AT-10 GS840FH32AT-10I
Description	10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
File Size	492.65K / 22 Page	View it Online	Download Datasheet

					White Electronic Designs Corporation
Part No.	EDI2AG272129V9D1 EDI2AG272129V10D1 EDI2AG272129V12D1 EDI2AG272129V85D1
Description	2x128Kx72, 3.3V,9ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块) 2x128Kx72, 3.3V,10ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 2x128Kx72, 3.3V,12ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块) 2x128Kx72,, 3.3V,8.5ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块)
File Size	259.95K / 11 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6R1008C1A-TI20 K6R1008C1A-JC15 K6R1008C1A-JI15 K6R1008C1A-JI20 K6R1008C1A-TC12 K6R1008C1A-TI12 K6R1008C1A-TI15
Description	128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
File Size	167.22K / 8 Page	View it Online	Download Datasheet

For 12ns Found Datasheets File :: 57+ Page :: | 1 | 2 | 3 | 4 | <5> | 6 |

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