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  1.850v Datasheet PDF File

For 1.850v Found Datasheets File :: 274    Search Time::1.468ms    
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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM600E2Y-34H
OCR Text ......... 1700V q Insulated Type q 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CI...850V, IC = 600A, VGE = 15V VCC = 850V, IC = 600A VGE1 = VGE2 = 15V RG = 3.3 Resistive load switching...
Description HIGH POWER SWITCHING USE INSULATED TYPE 600 A, 1700 V, N-CHANNEL IGBT

File Size 44.60K  /  4 Page

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    CM1200HA-34H

Mitsubishi Electric Semiconductor
Part No. CM1200HA-34H
OCR Text ......... 1700V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converter...850V, IC = 1200A, VGE = 15V VCC = 850V, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switchi...
Description 1200 A, 1700 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 44.59K  /  4 Page

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    CM2400HC-34N CM2400HC-34N09

Mitsubishi Electric Semiconductor
Part No. CM2400HC-34N CM2400HC-34N09
OCR Text ......... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Trench Gate IGBT : CSTBTTM q Soft Reverse Recovery Diode APPLICAT...850V, IC = 2400A, VGE = 15V, Tj = 25C IE = 2400A, VGE = 0V, Tj = 25C (Note 4) IE = 2400A, VGE = 0V, ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 56.52K  /  6 Page

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    CM2400HC-34H05 CM2400HC-34H09

Mitsubishi Electric Semiconductor
Part No. CM2400HC-34H05 CM2400HC-34H09
OCR Text ......... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Soft Reverse Recovery Diode APPLICATION Traction drives, High Rel...850V, IC = 2400A, VGE = 15V, Tj = 25C IE = 2400A, VGE = 0V, Tj = 25C (Note 4) IE = 2400A, VGE = 0V, ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 63.73K  /  6 Page

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    CM1200HA-34H

Powerex Power Semiconductors
Part No. CM1200HA-34H
OCR Text ......... 1700V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converter...850V, IC = 1200A, VGE = 15V VCC = 850V, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switchi...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 42.85K  /  4 Page

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    CM800DZ-34H

POWEREX[Powerex Power Semiconductors]
Part No. CM800DZ-34H
OCR Text ...~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.0 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, s...850V, IC = 800A, VGE = 15V VCC = 850V, IC = 800A VGE1 = VGE2 = 15V RG = 3.3 Resistive load switching...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 61.53K  /  4 Page

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    IXBH42N170

IXYS Corporation
Part No. IXBH42N170
OCR Text ...to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive...850V V F - Volts 2 2.5 3 3.5 Fig. 10. Dependence of Turn-Off Energy on Ic 24 22 R...
Description High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

File Size 577.60K  /  5 Page

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    ISL6560 ISL6560_62EVAL1 ISL656062EVAL1 ISL6560CB ISL6560CB-T ISL6560CBZ ISL6560CBZ-T ISL6560EVAL1 ISL6562EVAL1 ISL6560/6

Intersil, Corp.
Intersil Corporation
Part No. ISL6560 ISL6560_62EVAL1 ISL656062EVAL1 ISL6560CB ISL6560CB-T ISL6560CBZ ISL6560CBZ-T ISL6560EVAL1 ISL6562EVAL1 ISL6560/62EVAL1 INTERSILCORPORATION-ISL6562EVAL1
OCR Text ...ccuracy of 0.8% that range from 1.100-1.850v, and are set by the microprocessor. Pull up currents on these VID pins eliminates the need for external pull-up resistors. Another feature of this controller IC is the PWRGD monitor circuit and l...
Description Microprocessor CORE Voltage Regulator Two-Phase Buck PWM Controller 微处理器核心电压调节两相降压PWM控制

File Size 385.19K  /  14 Page

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    BULD39D-1 BULD39DT4 -BULD39D-1

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BULD39D-1 BULD39DT4 -BULD39D-1
OCR Text 1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features NPN transistor High voltage capability Minimum lot...850V VCE = 850V VEB = 9V Tj = 125C Min. Typ. Max. 100 500 100 Unit A A A VCEO(sus) VCE(sat) (1) ...
Description High Voltage Fast-Switching NPN Power Transistor

File Size 230.03K  /  12 Page

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For 1.850v Found Datasheets File :: 274    Search Time::1.468ms    
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