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STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 GAL16V8AS-10EB3 GAL16V8AS-10EC1 GAL16V8AS-10EC3 GAL16V8AS-10HB1 GAL16V8AS-10HB3 GAL16V8AS-10HC1 GAL16V8AS-10HC3 GAL16V8AS-10QB1 GAL16V8AS-10QB3 GAL16V8AS-10QC1 GAL16V8AS-10QC3 GAL16V8AS-12EB1 GAL16V8AS-12EB3 GAL16V8AS-12EC1 GAL16V8AS-12EC3 GAL16V8AS-12HB1 GAL16V8AS-12HB3 GAL16V8AS-12HC1 GAL16V8AS-12HC3 GAL16V8AS-12QB1 GAL16V8AS-12QB3 GAL16V8AS-12QC1 GAL16V8AS-12QC3 GAL16V8AS-15EB1 GAL16V8AS-15EB3 GAL16V8AS-15EC1 GAL16V8AS-15EC3 GAL16V8AS-15HB1 GAL16V8AS-15HB3 GAL16V8AS-15HC1 GAL16V8AS-15HC3 GAL16V8AS-15QB1 GAL16V8AS-15QB3 GAL16V8AS-15QC1 GAL16V8AS-15QC3 GAL16V8AS-20EB1 GAL16V8AS-20EB3 GAL16V8AS-20EC1 GAL16V8AS-20EC3 GAL16V8AS-20HB1 GAL16V8AS-20HB3 GAL16V8AS-20HC1 GAL16V8AS-20HC3 GAL16V8AS-20QB1 GAL16V8AS-20QB3 GAL16V8AS-20QC1 -GAL16V8AS-20HB3 -GAL16V8AS-20EC1 -GAL16V8AS-20EC3 -GAL16V8AS-10QC3
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| Description |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; current, Ic continuous a max:24A; current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
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| File Size |
736.53K /
14 Page |
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it Online |
Download Datasheet
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MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
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| Part No. |
PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PST994F PST994G PST994H PST994I PST994J PST994K PST994L
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| Description |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; continuous Drain current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); current, Id max:2.2A; current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; continuous Drain current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
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| File Size |
93.95K /
4 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
BAV170
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| Description |
Plastic SMD package Low leakage current: typ. 3 pA continuous reverse voltage:max. 75 V
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| File Size |
90.14K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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