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IDT
Integrated Device Technology, Inc.
SRAM
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| Part No. |
IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S200PFI IDT71T75802S100BG IDT71T75802S100BGI IDT71T75802S133PF IDT71T75802S166BG IDT71T75802S225PFI IDT71T75802S100PF IDT71T75802S150BGI IDT71T75802S150PF IDT71T75802S166BGI IDT71T75802S225BG IDT71T75802S100PFI IDT71T75802S133BGI IDT71T75802S133PFI IDT71T75802S150PFI IDT71T75802S166PFI IDT71T75802S200BGI IDT71T75802S225BGI IDT71T75602S200BG IDT71T75602S133BGI IDT71T75602S200BGI IDT71T75602S200PF IDT71T75602S225BG IDT71T75602S225PF IDT71T75602S225PFI IDT71T75602S225BGI IDT71T75602S100PFI IDT71T75602S133PFI IDT71T75802S200PF IDT71T75602S150PFI IDT71T75602S200PFI IDT71T75802S225PF IDT71T75602S166PF IDT71T75802S166PF IDT71T75602S100BG IDT71T75602S100BG8 IDT71T75602S100BGI IDT71T75602S100BGI8 IDT71T75602S100PF IDT71T75602S100PF8 IDT71T75602S100PFI8 IDT71T75602S133BG8 IDT71T75602S133BGI8 IDT71T75602S133PF IDT71T75602S133PF8 IDT71T75602S166PFI
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| Description |
512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter pipelined Outputs
2.5V 512K x 36 ZBT Synchronous 2.5V I/O pipeline SRAM
512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter pipelined Outputs
512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter pipelined Outputs
BULK COAxIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter pipelined Outputs 1M x 18 ZBT SRAM, 4.2 ns, PQFP100
High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M x 18 ZBT SRAM, 3.2 ns, PBGA119
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter pipelined Outputs 1M x 18 ZBT SRAM, 3 ns, PQFP100
Current-Mode PWM Controller 14-SOIC -40 to 85 1M x 18 ZBT SRAM, 3.8 ns, PQFP100
Current-Mode PWM Controller 8-PDIP -40 to 85 1M x 18 ZBT SRAM, 3.5 ns, PQFP100
Current-Mode PWM Controller 8-SOIC -40 to 85 1M x 18 ZBT SRAM, 5 ns, PQFP100
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| File Size |
641.85K /
25 Page |
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it Online |
Download Datasheet
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Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
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| Part No. |
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV25-167AC CY7C1372CV25-167BGC CY7C1370CV25-250BZI CY7C1372CV25-250BZI CY7C1370CV25-225AC CY7C1372CV25-225AC CY7C1370CV25-225AI CY7C1372CV25-225AI CY7C1370CV25-225BGC CY7C1372CV25-225BGC CY7C1372CV25-225BGI CY7C1372CV25-225BZC CY7C1372CV25-250BGC CY7C1372CV25-200BGC CY7C1370CV25-167BZI CY7C1370CV25-225BGI CY7C1370CV25-167BGI CY7C1370CV25-250BGI CY7C1370CV25-200BGI CY7C1370CV25-225BZC CY7C1370CV25-250BGC CY7C1370CV25-250AC CY7C1370CV25-250AI CY7C1370CV25-167BGC CY7C1370CV25-200BGC CY7C1370CV25-167BZC CY7C1370CV25-167AC CY7C1370CV25-167AI CY7C1370CV25-200AC CY7C1370CV25-200BZC CY7C1372CV25-225BZI CY7C1372CV25-200BGI CY7C1372CV25-200BZI CY7C1372CV25-200AI
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| Description |
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 1M x 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 1M x 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 1M x 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 1M x 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 1M x 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 512K x 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 512K x 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 512K x 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 512K x 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,x7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 pipelined SRAM with NoBL Architecture
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| File Size |
498.10K /
27 Page |
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Alliance Semiconductor Corp...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
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| Part No. |
AS7C33128PFD32_36B AS7C33128PFD36B-200TQIN AS7C33128PFD32B AS7C33128PFD32B-133TQC AS7C33128PFD32B-133TQCN AS7C33128PFD32B-133TQI AS7C33128PFD32B-133TQIN AS7C33128PFD32B-166TQC AS7C33128PFD32B-166TQCN AS7C33128PFD32B-166TQI AS7C33128PFD32B-166TQIN AS7C33128PFD32B-200TQC AS7C33128PFD32B-200TQCN AS7C33128PFD32B-200TQI AS7C33128PFD32B-200TQIN AS7C33128PFD36B-133TQC AS7C33128PFD36B-133TQCN AS7C33128PFD36B-133TQI AS7C33128PFD36B-133TQIN AS7C33128PFD36B-166TQC AS7C33128PFD36B-166TQCN AS7C33128PFD36B-166TQI AS7C33128PFD36B-166TQIN AS7C33128PFD36B-200TQC AS7C33128PFD36B-200TQCN AS7C33128PFD36B-200TQI
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| Description |
Sync SRAM - 3.3V
LM397 Single General Purpose Voltage Comparator; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel
3.3V 128K x 32/36 pipeline burst synchronous SRAM 128K x 32 STANDARD SRAM, 4 ns, PQFP100
3.3V 128K x 32/36 pipeline burst synchronous SRAM 128K x 36 STANDARD SRAM, 4 ns, PQFP100
128K x 36 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, TQFP-100
128K x 32 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, TQFP-100
128K x 32 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, LEAD FREE, TQFP-100
128K x 36 STANDARD SRAM, 4 ns, PQFP100 14 x 20 MM, LEAD FREE, TQFP-100
3.3V 128K x 32/36 pipeline burst synchronous SRAM 128K x 32 STANDARD SRAM, 3 ns, PQFP100
3.3V 128K x 32/36 pipeline burst synchronous SRAM 128K x 32 STANDARD SRAM, 3.5 ns, PQFP100
3.3V 128K x 32/36 pipeline burst synchronous SRAM 3.3 128K的x 32/36管道爆裂同步SRAM
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| File Size |
530.02K /
19 Page |
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it Online |
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Spansion, Inc.
SPANSION LLC
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| Part No. |
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WCF AM29LV800DB-90WCC AM29LV800DT-90ED AM29LV800DB-90ED AM29LV800DT-120EC AM29LV800DT-90WCF AM29LV800DB-120SD AM29LV800DB-90SF SPANSIONLLC-AM29LV800DB-70WCD AM29LV800DB-120SC
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| Description |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K x 16 FLASH 3V PROM, 70 ns, PDSO48
512K x 16 FLASH 3V PROM, 90 ns, PDSO48
512K x 16 FLASH 3V PROM, 70 ns, PBGA48
512K x 16 FLASH 3V PROM, 90 ns, PBGA48
512K x 16 FLASH 3V PROM, 120 ns, PDSO48
512K x 16 FLASH 3V PROM, 120 ns, PDSO44
512K x 16 FLASH 3V PROM, 90 ns, PDSO44
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| File Size |
751.64K /
46 Page |
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it Online |
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Renesas Electronics Corporation.
Renesas Electronics, Corp.
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| Part No. |
M38030F2L-xxxHP M38030F2L-xxxKP M38030F2L-xxxSP M38030F2L-xxxWG M38030MAL-xxxWG M38030MAL-xxxKP M38030FAL-xxxSP M38031FAL-xxxHP M38030FAL-xxxWG M38030MAL-xxxHP M38030FAL-xxxKP M38031FAL-xxxKP M38030FAL-xxxHP M38031FAL-xxxSP M38031FAL-xxxWG M38030MAL-xxxSP M38030F3L-xxxHP M38030F3L-xxxWG M38030M3L-xxxKP M38030F3L-xxxSP M38030F3L-xxxKP M38030M3L-xxxHP M38030FBL-xxxWG M38030MBL-xxxHP M38030FBL-xxxHP M38030FBL-xxxSP M38030MBL-xxxKP M38030M2L-xxxHP M38030M2L-xxxKP M38030M2L-xxxSP M38030M2L-xxxWG M38031F2L-xxxHP M38031F2L-xxxKP M38031F2L-xxxSP M38031F2L-xxxWG M38030FB-xxxHP M38031FBL-xxxSP M38035MBL-xxxSP M38038FBL-xxxSP M38039FBL-xxxSP M38030MBL-xxxSP M38036MBL-xxxSP M38037FBL-xxxSP M38037MBL-xxxSP M38036FBL-xxxSP M38038MBL-xxxSP M38031FC-xxxHP M38031FC-xxxKP M38031FC-xxxWG M38031FCL-xxxHP M38031FCL-xxxKP M38031FCL-xxxSP M38031FCL-xxxWG M38031F5-xxxKP M38031F5-xxxSP M38031F5-xxxWG M38031F5L-xxxHP M38031F5L-xxxKP M38031F5L-xxxSP M38031F5L-xxxWG M38030F1-xxxHP M38030F1-xxxKP M38030F1-xxxSP M38030F1-xxxWG M38030F1L-xxxHP M38030F1L-xxxKP M38030F1L-xxxSP M38030F1L-xxxWG M38031F1-xxxKP M38031F1-xxxWG M38031F1L-xxxHP M38031F1L-xxxKP M38031F6-xxxHP M38031F6-xxxKP M38031F6-xxxSP M38031F6-xxxWG M
|
| Description |
256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) pipelined SRAM; Architecture: Standard Sync, pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit qdr(TM)-ii SRAM 4-Word Burst Architecture; Architecture: qdr-ii, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-x and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit qdr(TM)-ii SRAM 2-Word Burst Architecture; Architecture: qdr-ii, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) pipelined SRAM; Architecture: Standard Sync, pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) pipelined DCD Sync SRAM; Architecture: Standard Sync, pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K x 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) pipelined DCD Sync SRAM; Architecture: Standard Sync, pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) xDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-ii SRAM 2-Word Burst Architecture; Architecture: DDR-ii CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit qdr(TM)-ii SRAM 2-Word Burst Architecture; Architecture: qdr-ii, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) pipelined Sync SRAM; Architecture: Standard Sync, pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
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