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				Advanced Power Electronics Corp.
Part No.	AP75T10GSP-HF14
OCR Text	...-source breakdown voltage v gs =0v, i d =1ma 100 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.09 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 15 m ? v gs =4.5v,...
Description	Simple Drive Requirement
File Size	96.79K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP2764AP-A
OCR Text	...-source breakdown voltage v gs =0v, i d =1ma 650 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =3.2a - - 1.1 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	57.77K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON7424
OCR Text	...ts bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 1.3 1.7 2.3 v i d(on) 140 a 4.3 5.2 t j =125c 6.6 7.9 6 7.5 m w g fs 55 s v sd 0.7 1 v i s 40 a c iss 2280 2860 3450 pf c oss 280 405 530 pf c rss ...
Description	30V N-Channel MOSFET
File Size	235.81K / 6 Page	View it Online	Download Datasheet

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