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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S9070NR1
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| OCR Text |
...bol VDSS VGS PD Tstg TJ Value - 0.5, + 68 - 0.5, + 15 219 1.25 - 65 to +150 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
...865 - 895 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 60 W, f = 865 - 895 MHz Power Gain D... |
| Description |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
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| File Size |
444.63K /
12 Page |
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it Online |
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3M ELECTRONIC PRODUCTS DIVISION
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| Part No. |
3372-D02 3428-D02 3431-D02 N3372-D002 N3432-D202RB N3431-D002 3314-D302 3440-D302
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| OCR Text |
...emp option flammability: ul 94v-0 color: gray (pbt), beige (pct), black (pct) contact: material: copper alloy plating: underplating: 100 ? [...865 (21.97) 0.71 (18.0) bc 28 3314 1.46 (37.2) 1.065 (27.05) 0.91 (23.1) bc 32 3408 1.56 (39.... |
| Description |
120 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER
40 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER
68 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER
80 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER
28 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER
60 CONTACT(S), MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER
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| File Size |
811.79K /
6 Page |
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it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9125NR1_06 MRF6S9125NBR1 MRF6S9125NR1
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| OCR Text |
...th = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.2 dB Drain Efficiency -- 31% ACPR @ 750 kHz Offset = - 47.1 dBc ...865 - 960 MHz or 921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 40% Spectral Regrowth @ 400 ... |
| Description |
RF Power Field Effect Transistors
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| File Size |
848.94K /
20 Page |
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it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9160HSR3 MRF6S9160HR3
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| OCR Text |
...th = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.9 dB Drain Efficiency -- 30.5% ACPR @ 750 kHz Offset -- - 46.8 d...865 - 895 MHz) Power Gain -- 20 dB Drain Efficiency -- 45% Spectral Regrowth @ 400 kHz Offset = - 66... |
| Description |
RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
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| File Size |
532.81K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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