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Shenzhen Luguang Electronic Technology Co., Ltd
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Part No. |
DBL0.3K DBL0.3j DBL0.3M
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OCR Text |
... denotes cathode end wei g ht: 0.017 g ram g g maximum ratings & thermal characteristics (t a = 25 c unless otherwise noted) note 1: mou...3j http://www.luguang.cn email:lge@luguang.cn 1.0 ... |
Description |
Surface Mount Diode
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File Size |
147.59K /
2 Page |
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Sony
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Part No. |
CXK77B1841AGB CXK77B3641AGB
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OCR Text |
...d on the rising edge of K. SS = 0 specifies a Write Operation when SW = 0 specifies a Read Operation when SW = 1 SS = 1 specifies a Deselect Operation Synchronous Global Write Enable Input - Registered on the rising edge of K. SW = 0 specif... |
Description |
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization) From old datasheet system
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File Size |
221.04K /
28 Page |
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7I161882B-FC30 K7I163682B-FC30 K7I163682B K7I163682B-FC16 K7I163682B-FC20 K7I163682B-FC25
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OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Add the speed bin (-33, -30) 2. Delete the speed bin (-25, -13) 1. C...3J,10J,11J,3K,10K,11K,2L,3L,11L 3M,10M,11M,2N,3N,11N,3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5... |
Description |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位,1Mx18位首席信息官b2DDRII的SRAM GT 35C 35#16 PIN PLUG RTANG
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File Size |
375.70K /
17 Page |
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Samsung Electronic
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Part No. |
K7Q323682MK7Q321882M
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OCR Text |
0.2 dec 2001 k7q323682m k7q321882m preliminary document title 1mx36-bit, 2mx18-bit qdr tm sram the attached data sheets are prepared and a...3j,3l,3m,2n data inputs q 0-17 11p,10m,11l,11k,10j,11f,11e,10c,11b,2b,3d,3e, 2f,3g,3k,2l,3n,3p data ... |
Description |
1Mx36-bit, 2Mx18-bit QDRSRAM Data Sheet
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File Size |
441.24K /
17 Page |
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Sony, Corp.
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Part No. |
CXK77B1841AGB CXK77B3641AGB
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OCR Text |
... on the rising edge of k. ss = 0 specifies a write operation when sw = 0 specifies a read operation when sw = 1 ss = 1 specifies a deselect operation sw input synchronous global write enable input - registered on the rising edge of k... |
Description |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
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File Size |
227.24K /
28 Page |
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NXP Semiconductors N.V.
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Part No. |
BUK9E04-30B
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OCR Text |
...ounting base temperature 03no74 0 50 100 150 200 0 50 100 150 200 t mb ( c) i d (a) capped at 75 a due to package t mb (c) 0 200 150 50 100 03na19 40 80 120 p der (%) 0
buk9e04-30b all information provided in this document is subject t... |
Description |
N-channel TrenchMOS logic level FET N沟道TrenchMOS逻辑电平场效应管
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File Size |
169.54K /
13 Page |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K7R643684M K7R641884M
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OCR Text |
...M
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Update AC timing characteristics. 2. Change the JTAG instruction cod...3J,3L,3M,2N 1C,1D,2E,1G,1J,2K,1M,1N,2P 11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L 9K,9G,10F,9E,9D... |
Description |
2Mx36 & 4Mx18 QDRTM II b4 SRAM
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File Size |
350.56K /
18 Page |
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Motorola
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Part No. |
MCM63L836A
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OCR Text |
....8 = 3.8 ns MCM63L836A / 918A-4.0 = 4.0 ns MCM63L836A / 918A-4.2 = 4.2 ns MCM63L836A / 918A-4.5 = 4.5 ns MCM63L836A / 918A-5.0 = 5.0 ns * Sl...3J, 5J 3D, 5D, 3E, 5E, 3F, 5F, 3H, 5H, 3K, 5K, 3M, 5M, 3N, 5N, 3P, 5P, 5R 4A, 1B, 2B, 4B, 7B, 1C, 7C... |
Description |
8M Late Write HSTL From old datasheet system
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File Size |
411.85K /
20 Page |
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