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0.29a Datasheet PDF File

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				Microsemi
Part No.	APT6021BLLG
OCR Text	... apt6021bll apt6021sll 600v 29a 0.210 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package power mos 7 ? is a new generat...
Description	MOSFET
File Size	155.05K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	JANSR2N7426U MIL-PRF-19500_655 IRHNA9260 IRHNA93260 JANSF2N7426U
OCR Text	...HNA93260 300K Rads (Si) RDS(on) 0.154 0.154 ID -29A -29A IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard TM HEXFET TECHNOLOGY (R) QPL Part Number JANSR2N7426U JANSF2N7426U SMD-2 International Rectifi...
Description	-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
File Size	116.74K / 8 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2396
OCR Text	..., RthCS . . . . . . . . . . . . 0.5C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = 25V, st...29A, RG = 9.1, RD = 1.7, Note 4 - - - - Between lead, .250in. (6.0) mm from package and center of d...
Description	MOSFET N-Ch, Enhancement Mode High Speed Switch
File Size	27.40K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ44ESL IRFZ44EL
OCR Text	...on 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? ? 220 mj i ar avalanche cu...29a, v gs = 0v ? t rr reverse recovery time CCC 69 104 ns t j = 25c, i f = 29a q rr reverse reco...
Description	Advanced Process Technology Advanced Process Technology
File Size	168.45K / 11 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT8024JLL_04 APT8024JLL APT8024JLL04
OCR Text	0.240 POWER MOS 7 (R) R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement ...29A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 29A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	161.53K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ44ESPBF
OCR Text	...on 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 220 mj i ar avalanche cu...29a, v gs = 0v t rr reverse recovery time ??? 69 104 ns t j = 25c, i f = 29a q rr reverse reco...
Description	Advanced Process Technology
File Size	234.15K / 11 Page	View it Online	Download Datasheet

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