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Unisonic Technologies Co., Ltd. UTC[Unisonic Technologies]
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Part No. |
RB751V40L-CB2-R RB751V40 RB751V40-CB2-R
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OCR Text |
... * Low forward voltage drop (VF=0.37V Typ. at 1mA) * Low reverse leakage current * Fast switching speed
+ SOD-323
*Pb-free plating product number: RB751V40L
ORDERING INFORMATION
Order Number Normal Lead Free Plating RB751V40-CB2-R... |
Description |
SCHOTTKY DIODES 0.03 A, 40 V, SILICON, SIGNAL DIODE
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File Size |
35.00K /
3 Page |
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ROHM[Rohm]
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Part No. |
RB851Y
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OCR Text |
...) Land size figure (Unit : mm)
0.5
0.220.05 0.130.05 (3)
Features 1) Ultra small mold type. (EMD4) 2) Low Ct and high detection efficiency.
0.45
1.60.1
(4)
1.20.1
1.60.1
1.0
00.1
EMD4
(1)
(2)
Construction... |
Description |
Schottky barrier diode
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File Size |
132.71K /
3 Page |
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ROHM[Rohm]
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Part No. |
RB886CS
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OCR Text |
...) Land size figure (Unit : mm)
0.55
0.60.05
0.90.05
1.00.05
Features 1) Ultra small mold type. (VMN2) 2) Low Ct and high detection efficiency.
0.45
0.160.05
VMN2
Construction Silicon epitaxial planar
0.156 0.350.1 ... |
Description |
Schottky barrier diode
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File Size |
108.59K /
3 Page |
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ROHM[Rohm]
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Part No. |
RB886G
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OCR Text |
...d high detection efficiency.
0.60.05 0.270.03
CATHODE MARK
0.130.03
0.50.05
!Construction Silicon epitaxial planar
ROHM : VMD2 EIAJ : - JEDEC : -
!Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage Forward curre... |
Description |
Schottky barrier diode
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File Size |
54.29K /
2 Page |
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ROHM[Rohm]
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Part No. |
RB886Y
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OCR Text |
...) Land size figure (Unit : mm)
0.5
1.60.1 0.220.05
Features 1) Ultra small mold type. (EMD4) 2) Low Ct and high detection efficiency.
(4)
(3)
1.20.1
1.60.1
1.0
00.1
EMD4
Construction Silicon epitaxial planar
(1... |
Description |
Schottky barrier diode
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File Size |
133.71K /
3 Page |
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it Online |
Download Datasheet
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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Part No. |
RBO08-40T RBO08-40G RBO08-40M
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OCR Text |
...oefficient of VBR F = 1MHz VR = 0 V 10/1000s 1000 Test Conditions Value Min. 22 24 Typ. Max. 35 32 50 10 40 9 Unit V V A A V 10 /C pF
-4
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40C < Tamb < + 85C) Symbol VF 13 IF = 8 A IF = 8 A @ Tamb ... |
Description |
REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO REVERSED BATTERYAND OVER VOLTAGE PROTECTION CIRCUIT (RBO)
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File Size |
153.20K /
14 Page |
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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Part No. |
RBO08-40T RBO08-40G RBO08-40G_03 RBO08 RBO08-40G03
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OCR Text |
...oefficient of VBR F = 1MHz VR = 0 V 1000 10/1000s Test Conditions Value Min. 22 24 Typ. Max. 35 32 50 10 40 9 Unit V V A A V 10 /C pF
-4
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40C < Tamb < + 85C) Symbol VF 13 IF = 8 A Test Conditions ... |
Description |
REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO)
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File Size |
300.33K /
9 Page |
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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Part No. |
RBO40-40T RBO40-40G RBO40-40M
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OCR Text |
...40G RBO40-40T RBO40-40T Value 1.0 1.0 1.0 60 Unit C/W
Rth (j-a)
Junction to ambient
C/W
D1 1 3
I32
I13
IF
Ipp32
T1
2
T2
IR32 IR M32
VCL31 VBR31 VR M31 VF13 IRM 31 IR31
V13
VRM 32 VB R 32 VC L 32
V... |
Description |
REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
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File Size |
164.58K /
15 Page |
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it Online |
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Price and Availability
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