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TY Semiconductor Co., Ltd
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| Part No. |
AOB10T60P
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| OCR Text |
0.7 q g,typ 26nc e oss @ 400v 3.5 m j applications 100% uis tested 100% r g tested symbol v ds v gs i dm l=1mh i ar e ar e as ...100v turn-off delaytime turn-off fall time v gs =10v, v ds =300v, i d =10a, r g =25 w i f =10a,di/dt... |
| Description |
Trench Power AlphaMOS-II technology
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| File Size |
1,147.02K /
7 Page |
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ASJ
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| Part No. |
YCN16
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| OCR Text |
...sys-eng-202 page : 2 / 18 1.0 scope..............................................................................................?.???.....100v ycn16 1/16w 50v 100v rated power shall be the load power correspondi ng to nominal wattage suit... |
| Description |
(YCN16 / YCN10) Chip Resistor Network
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| File Size |
1,483.15K /
18 Page |
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Beta Dyne
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| Part No. |
Q25D5-24 Q25S5-48 Q25S15-24 Q25S12-48
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| OCR Text |
...tage: 10v max.) supply off 0 0.6 vdc logic input reference logic compatability ttl open collector or cmos open drain gener...100v electrolytic c4=50f@100v electrolytic c5= 10f ceramic capacitors c6,c7=22f@35v low esr tantalum... |
| Description |
25-30W DC/DC Converter
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| File Size |
674.15K /
9 Page |
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Tyco
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| Part No. |
6EL1SC 6EL1SM 6EL4CM 6EL1SCM 6EL4M
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| OCR Text |
... germany: 49-89-6089-0 are metric equivalents. to change. l series l series corcom product guide ul re...100v 120v 100v 20v 120v 220v 240v a a b b c c dd e e f f a b c d e f hot neutral n ote 1 g g round... |
| Description |
Power Entry Module
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| File Size |
115.31K /
4 Page |
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Secos
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| Part No. |
15N10
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| OCR Text |
...8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g...100v, r ds(on) 110m ? n-ch enhancement mode power mosfet 07-mar-2013 rev. e page 2 of 4 htt... |
| Description |
N-Ch Enhancement Mode Power MOSFET
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| File Size |
602.49K /
4 Page |
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SamHop Microelectronics...
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| Part No. |
STP06N20 STF06N20
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| OCR Text |
...nge without notice. s g d ver 1.0 g d s stf series to-220f absolute maximum ratings ( t c =25 c unless otherwise noted ) product summar...100v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time v ds =100v,i d ... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
205.36K /
11 Page |
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Nippon Precision Circuits Inc
Nichicon corporation
Nippon Precision Circuits I...
Nippon Precision Circui...
United Chemi-Con, Inc.
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| Part No. |
EKMG500E100ME11D EKMG201E221MMP1S EKMG201E100MJ16S EKMG201E101ML25S EKMG201E330MK20S EKMG201E220MJ20S EKMG250E101MF11D EKMG630E100ME11D EKMG630E220ME11D EKMG630E101MJC5S EKMG630E221MJ16S EKMG630E102ML25S EKMG401E100MJ20S EKMG401E220MK25S EKMG401E1R0MF11D EKMG401E101ML40S EKMG401E2R2MHB5D EKMG160E101ME11D EKMG451E220ML25S EKMG451E100MK20S EKMG451E330MLN3S EKMG451E2R2MJC5S EKMG451E470MLP1S EKMG451ELL100MK20S EKMG451E4R7MJ20S EKMG451E3R3MJ16S EKMG100E102MJC5S EKMG350E101MF11D EKMG160E102MJ16S EKMG160E103MMP1S EKMG500E101MHB5D EKMG201E470MK20S EKMG201E4R7MHB5D EKMG630E330MF11D EKMG201E3R3MF11D EKMG630E470MF11D EKMG630E471MK20S EKMG630E331MJ20S EKMG250E221MHB5D EKMG250E102MJ20S EKMG100E153MMP1S EKMG401E3R3MJC5S EKMG401E330ML25S EKMG401E4R7MJ16S EKMG251E330MK20S EKMG251E100MJ16S EKMG251E101MLN3S EKMG251E221MM40S EKMG251E470MK25S EKMG251E4R7MHB5D EKMG251E220MK20S EKMG251E3R3MHB5D EKMG251E2R2MF11D EKMG250ELL102MJ20S EKMG350E102MK20S EKMG350E221MHB5D EKMG100E331MF11D EKMG161E470MK20S
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| OCR Text |
...6.3 to 100v dc 160 to 450v dc i=0.03cv or 4 a, whichever is greater. after 5minutes after 1minute cv Q 1,00 0 i=0.1cv+40 max . i=0.03cv+15 max. cv > 1,000 i=0.04cv+100 max. i=0.02cv+25 max. where, i : max. leakage current ( a), c : nomina... |
| Description |
MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
Endurance with ripple current 1,000 to 2,000 hours at 105
Endurance with ripple current 1,000 to 2,000 hours at 105
Standard, Downsized, 105?
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| File Size |
428.66K /
3 Page |
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Price and Availability
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