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  -0.8a Datasheet PDF File

For -0.8a Found Datasheets File :: 17097    Search Time::2.625ms    
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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
OCR Text 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) ...8A W 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
Part No. D45VH4 D45VH1 D45VH10 D45VH7
OCR Text ...1' ^ ? ? mm min 15.70 9.90 4.20 0.70 4.98 2.70 0.44 13.20 1 10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 j.ou 5.18 2.90 0.46 13.40 ...8a;ib=-0.8a lc=-15a;lb=-3a;tc=100t: ic=-8a;ib=-0.8a ic=-8a;ib=-0.8a;tc=100c vce=ratedvce;vbe(om=-4v ...
Description Silicon PNP Power Transistors

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    SSG8N10

SeCoS Halbleitertechnologie GmbH
Part No. SSG8N10
OCR Text ... min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 ...8a , 100v , r ds(on) 48m n-ch enhancement mode power mosfet 25-apr-2013 rev. a page 2 of ...
Description N-Ch Enhancement Mode Power MOSFET

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    IRF9530-220M

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF9530-220M
OCR Text 0.70 0.90 3.56 Dia. 3.81 10.41 10.67 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16....8A -37A 45W 0.36W/C -55 to 150C 2.8C/W max. 80C/W max. Semelab plc. Telephone +44(0)1455 55656...
Description P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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    IRF9530S IRF9530SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9530S IRF9530SMD
OCR Text 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .6 0 (0 .1 4 2 ) M ax. 4...8A W 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 1 1 .5 8 (0 .4 5 6 ...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

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    IXTT16N10D2 IXTH16N10D2

IXYS Corporation
Part No. IXTT16N10D2 IXTH16N10D2
OCR Text ...stg - 55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) ...8a, note 1 64 m i d(on) v gs = 0v, v ds = 25v, note 1 16 a depleti...
Description Depletion Mode MOSFET
   Depletion Mode MOSFET

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    2N6371

Inchange Semiconductor Company Limited
Part No. 2N6371
OCR Text ...emitter sustaining voltage i c =0.2a ;i b =0 40 v v cesat-1 collector-emitter saturation voltage i c =8a ;i b =0.8a 1.5 v v cesat-2 collector-emitter saturation voltage i c =16a; i b =4a 4.0 v v be base-emitter on voltage i...
Description Silicon NPN Power Transistors

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    STP6506

Stanson Technology
Part No. STP6506
OCR Text ... p d 1.15 w t a =70 0.75 operation junction temperature t j 55/150 storage temperature range t stg 55/150 thermal...8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.sta...
Description Dual P Channel Enhancement Mode MOSFET

File Size 837.90K  /  6 Page

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    SSM3055L

SeCoS Halbleitertechnologie GmbH
Part No. SSM3055L
OCR Text ... max. a 6.20 6.70 g - 0.10 b 6.70 7.30 h - - c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k - - e 4.50 4.70 ...8a , 60v , r ds(on) 100 m ? n-channel enhancement mode mosfet 26-jul-2013 rev. a page ...
Description N-Channel Enhancement Mode MOSFET
N-Ch Enhancement Mode MOSFET

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    SPC660114

SYNC POWER Crop.
Part No. SPC660114
OCR Text ...5 p d 1.15 w t a =70 0.75 operating junction temperature t j -55/150 storage temperature range t stg -55/150 therm...8a n-ch 0.048 0.068 ? v gs =-10v,i d =-2.8a p-ch 0.077 0.105 v gs = 4.5v,i d = 2.3a n-ch 0...
Description N & P Pair Enhancement Mode MOSFET

File Size 288.65K  /  11 Page

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