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32BCJ 2N11F LIS331D AUDIO CHIPS E2409XSR 2903069 0US60
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  vge Datasheet PDF File

For vge Found Datasheets File :: 5672    Search Time::4.094ms    
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    HGTD7N60C3S HGTP7N60C3 FN4141

INTERSIL[Intersil Corporation]
Part No. HGTD7N60C3S HGTP7N60C3 FN4141
OCR Text ...cuit Withstand Time (Note 2) at vge = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at vge = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 600 1...
Description 3.3V 72-mc CPLD
14A, 600V, UFS Series N-Channel IGBTs
14A 600V UFS Series N-Channel IGBTs
From old datasheet system

File Size 143.46K  /  7 Page

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    HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S

Fairchild Semiconductor Corporation
HARRIS[Harris Corporation]
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S
OCR Text ...cuit Withstand Time (Note 2) at vge = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 1 Short Circuit Withstand Time (Note 2) at vge = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 NOTES: 1. Repet...
Description 3.3V 72-mc CPLD
14A 600V UFS Series N-Channel IGBTs
14A, 600V, UFS Series N-Channel IGBTs
14A/ 600V/ UFS Series N-Channel IGBTs

File Size 153.41K  /  6 Page

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    Korea Electronics (KEC)
Part No. KGT25N120NDA
OCR Text ...hing time 90% 90% 10% 10% + vge vge vce vce ic ic ic ic t2 t1 td tf vce ic dt eoff t1 ? t2 = (off) vcc 10% irr qrr vpk ic diodereverse waveforms trr tx ic dt tx trr = ? gate voltage dut 10% + vg 10% 90% + vg vce vce ic dt eon vcc ic ...
Description IGBT

File Size 128.67K  /  8 Page

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    MGP7N60ED MGP7N60ED_D ON1877 ON1876

ONSEMI[ON Semiconductor]
Part No. MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text ... Withstand Time (VCC = 400 Vdc, vge = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds...
Description Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system

File Size 140.16K  /  6 Page

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    MGP7N60E

MOTOROLA[Motorola, Inc]
Part No. MGP7N60E
OCR Text ... Withstand Time (VCC = 400 Vdc, vge = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting...
Description Insulated Gate Bipolar Transistor

File Size 118.28K  /  6 Page

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    APT50GF120B2R APT50GF120LR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50GF120B2R APT50GF120LR
OCR Text ...M RATINGS Symbol VCES VCGR VEC vge I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated G C E G C C E APT...
Description The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代
Fast IGBT 1200V 80A

File Size 37.28K  /  3 Page

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    APT50GF120JRD

ADPOW[Advanced Power Technology]
Part No. APT50GF120JRD
OCR Text ...ATINGS (IGBT) Symbol VCES VCGR vge I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage C G E APT50GF120JRD UNIT All Ratings: TC = 25C unless otherwise specified. 1200 RY A IN MIN Collector-Gate Volta...
Description Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.

File Size 51.80K  /  4 Page

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    APT50GF60B2RD APT50GF60LRD

ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT50GF60B2RD APT50GF60LRD
OCR Text ...ATINGS (IGBT) Symbol VCES VCGR vge I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage C G E C C E APT50GF60LRD G E APT50GF60B2RD/LRD UNIT All Ratings: TC = 25C unless otherwise specified. ...
Description Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代

File Size 112.47K  /  7 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text ...XIMUM RATINGS Symbol VCES VCGR vge I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated G C E G E All Ratings: TC = ...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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    APT50GF60HR

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50GF60HR
OCR Text ...IMUM RATINGS Symbol VCES V CGR vge I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated C E G C G E All Ratings: TC = 25C un...
Description Fast IGBT 600V 55A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 25.29K  /  2 Page

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For vge Found Datasheets File :: 5672    Search Time::4.094ms    
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