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  vesm Datasheet PDF File

For vesm Found Datasheets File :: 51    Search Time::3.828ms    
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    SSM3K15AMFV

Toshiba Semiconductor
Part No. SSM3K15AMFV
OCR Text ...4mm 1.gate 2.source 3.drain vesm 1.20.05 0.320.05 1 2 3 0.40.4 0.220.05 0.80.05 0.80.05 1.20.05 0.130.05 0.50.05 d i 1 2 3 1 2 3 ssm3k15amfv 2010-11-29 2 electrical characteristics (ta = 25c) characteristics symbol test con...
Description Load Switching Applications

File Size 198.70K  /  5 Page

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    2SC6026MFV 2SC6026MFV-GR 2SC6026MFV-Y

Toshiba Semiconductor
Part No. 2SC6026MFV 2SC6026MFV-GR 2SC6026MFV-Y
OCR Text ... 0.5 0.45 0.4 0.4 1.15 0.45 0.4 vesm 1.base 2.emitter 3.collector 1 2 3 0.80 0.05 0.32 0.05 0.22 0.05 0.8 0.05 0.4 1.2 0.05 1.2 0.05 0.13 0.05 0.5 0.05 1 0.4 2sc6026mfv 2010-05-19 2 electrical characteristics (ta = 25c) ch...
Description General-Purpose Amplifier Applications

File Size 142.76K  /  4 Page

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    TOSHIBA
Part No. SSM3K44MFV
OCR Text ... 1. gate 2. source 3. drain vesm 1.20.05 0.320.05 1 2 3 0.4 0.4 0.220.05 0.80.05 0.80.05 1.20.05 0.50.05 0.130.05 0.5mm 0.45mm 0.45mm 0.4mm start of commercial production 2009-12 ssm3k44mfv 2014-03-01 2 electrical characteristi...
Description Small-signal MOSFET

File Size 139.77K  /  5 Page

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    DF3A3.3FV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.3FV
OCR Text ...g 150 150 -55 ~ 150 Unit mW C C vesm 1. CATHODE1 2. CATHODE2 3. ANODE Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in temperature, etc.) may cau...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 124.78K  /  3 Page

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    SSM3K16FVTL3T

Toshiba Semiconductor
Part No. SSM3K16FVTL3T
OCR Text ...2 3 1.gate 2.source 3.drain vesm 0.5mm 0.45mm 0.45mm 0.4mm ssm3k16fv 2007-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ...
Description High Speed Switching Applications Analog Switch Applications

File Size 82.66K  /  5 Page

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    SSM3K44MFV

Toshiba Semiconductor
Part No. SSM3K44MFV
OCR Text ... 1. gate 2. source 3. drain vesm 1.20.05 0.320.05 1 2 3 0.4 0.4 0.220.05 0.80.05 0.80.05 1.20.05 0.50.05 0.130.05 0.5mm 0.45mm 0.45mm 0.4mm ssm3k44mfv 2009-05-27 2 electrical characteristics (ta = 25c) characteristics symb...
Description Field Effect Transistor

File Size 128.23K  /  5 Page

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    TOSHIBA
Part No. 2SC6026MFV
OCR Text ... 0.5 0.45 0.4 0.4 1.15 0.45 0.4 vesm 1.base 2.emitter 3.collector 1 2 3 0.80 0.05 0.32 0.05 0.22 0.05 0.8 0.05 0.4 1.2 0.05 1.2 0.05 0.13 0.05 0.5 0.05 1 0.4 start of commercial production 2005-02 2sc6026mfv 2014-03-01 2 elec...
Description Transistor for low frequency small-signal amplification

File Size 157.25K  /  4 Page

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    1SS361FV

Toshiba Semiconductor
Part No. 1SS361FV
OCR Text ...e Maximum Ratings (Ta = 25C) vesm 3. CATHODE JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in temperature, etc.) may cause this product...
Description Ultra-High-Speed Switching Applications

File Size 194.21K  /  4 Page

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    TOSHIBA
Part No. 2SC5376FV
OCR Text ...1.base 2.emitter 3.collector vesm 1.2 0.05 0.32 0.05 1 2 3 0.4 0.4 0.22 0.05 0.8 0.05 0.8 0.05 1.2 0.05 0.5 0.05 0.13 0.05 0.5mm 0.45mm 0.45mm 0.4mm start of commercial production 2003-07 2sc5376fv 2014-03-01 2 el...
Description Transistor for low frequency small-signal amplification

File Size 164.49K  /  5 Page

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    TOSHIBA
Part No. JDH3D01FV
OCR Text ..., f = 1 mhz ? 0.6 ? pf b h vesm 1.2 0.05 0.32 0.05 1 2 3 0.4 0.4 0.22 0.05 0.8 0.05 0.8 0.05 1.2 0.05 0.5 0.05 0.13 0.05 1. anode1 2. cathode2 3. cathode1/anode2 weight:0.0015g(typ.) start of commercial prod...
Description High frequency Schottky barrier diode

File Size 192.44K  /  4 Page

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For vesm Found Datasheets File :: 51    Search Time::3.828ms    
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