| |
|
 |
Alpha & Omega Semiconductor
|
| Part No. |
AOTF42S60
|
| OCR Text |
...ximum body-diode pulsed current turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time i f =21a,di/dt=100a/ s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =21... |
| Description |
Single HV MOSFETs (500V - 1000V)
|
| File Size |
282.90K /
6 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Alpha & Omega Semiconductor
|
| Part No. |
AOTF12T50P
|
| OCR Text |
... =12a,di/dt=100a/ s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =250v, i d =12a, r g =25 i f =12a,di/dt=100a/ s,v ds =100v turn-on rise time turn-on delaytime gate drain charge a. the value of r ja is measured with ... |
| Description |
Single HV MOSFETs (500V - 1000V)
|
| File Size |
411.08K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
HIROSE ELECTRIC Co., Ltd.
|
| Part No. |
PWR-82333
|
| OCR Text |
...h phase to prevent simultaneous turn-on of in-line transistors, thus eliminating a shoot through condition. the internal logic controls the high- and low-side gate drives for each phase and can operate from +5 to +15 v logic levels. the int... |
| Description |
Drives (Power Amplifiers)|3-Phase Bridge. Class K Hybrid. NASA Drawing #SSQ22691
|
| File Size |
612.69K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
Alpha & Omega Semiconductor
|
| Part No. |
AOTF4N60
|
| OCR Text |
... capacitance output capacitance turn-on delaytime dynamic parameters turn-off delaytime v gs =10v, v ds =300v, i d =4a, r g =25 gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time turn-on rise time body diode reverse recovery tim... |
| Description |
Single HV MOSFETs (500V - 1000V)
|
| File Size |
359.99K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
NXP Semiconductors N.V.
|
| Part No. |
PBSS301NX115
|
| OCR Text |
...0.92 1.05 v v beon base-emitter turn-on voltage v ce =2v; i c =2a [1] - 0.75 0.85 v t d delay time v cc = 12.5 v; i c =3a; i bon = 0.15 a; i boff = - 0.15 a -15- ns t r rise time - 40 - ns t on turn-on time - 55 - ns t s storage time - 195 ... |
| Description |
12 V, 5.3 A NPN low VCEsat (BISS) transistor; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd 5300 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
| File Size |
126.28K /
15 Page |
View
it Online |
Download Datasheet |
| |
|
|
Alpha & Omega Semiconductor
|
| Part No. |
AOL1240
|
| OCR Text |
... drain-source breakdown voltage turn-on rise time v =10v, v =20v, r =1 , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v gs =10v, ... |
| Description |
Single MV MOSFETs (40V - 400V)
|
| File Size |
276.89K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor, Corp.
|
| Part No. |
NDS9952ANL
|
| OCR Text |
...acteristics (note 2 ) t d(on) turn - on delay time n-channel v dd = 10 v, i d = 1 a, v gen = 1 0 v, r gen = 6 w p -channel v dd = -10 v, i d = -1 a, v gen = -10 v, r gen = 6 w n-ch 10 15 ns p-ch 9 40 t r turn - on ri... |
| Description |
Dual N & P-Channel Enhancement Mode Field Effect Transistor 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
| File Size |
366.77K /
13 Page |
View
it Online |
Download Datasheet |
| |
|
|
Skyworks Solutions
|
| Part No. |
AAT3169IFO-T1 AAT3169ISN-T1
|
| OCR Text |
...f = 3.4v 10.9ma/ch v f = 3.1v turn-on to 1x mode (v in = 4.2v; 20ma/channel) time (100s/div) en (2v/div) cp (2v/div) i in (200ma/div) v sink (500mv/div) turn-on to 1.5x mode (v in = 3.8v; 20ma/channel) time (100s/div) en (2v/div) cp (2v... |
| Description |
High Efficiency 1X/1.5X/2X Charge Pump for White LED Applications STDFN33-14 Package
High Efficiency 1X/1.5X/2X Charge Pump for White LED Applications QFN44-16 Package
|
| File Size |
1,224.04K /
19 Page |
View
it Online |
Download Datasheet |
| |
|
|
Alpha & Omega Semiconductor
|
| Part No. |
AOW4S60
|
| OCR Text |
...mum body-diode pulsed current c turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time i f =2a,di/dt=100a/ s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =2a,... |
| Description |
Single HV MOSFETs (500V - 1000V)
|
| File Size |
296.02K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
