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IRF[International Rectifier]
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| Part No. |
60CKQ045
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| OCR Text |
...ier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated to-258aa package. The device's forward voltage drop and reverse leakage current are optimized for the lowest p... |
| Description |
45A 45V Hi-Rel Schottky Common Cathode Diode in a to-258aa package
SCHOTTKY RECTIFIER
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| File Size |
301.31K /
4 Page |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT30D20HCT
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| OCR Text |
...very Characteristics * Hermetic TO-258 Package * Low Forward Voltage
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operat...258AA Package Outline
8.89 (.350) 8.63 (.340)
4.19 (.165) 3.94 (.155) 21.21 (.835) 20.70 (.815... |
| Description |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODES
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 200V 2x30A
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| File Size |
24.41K /
2 Page |
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Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT30D40HCT
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| OCR Text |
...very Characteristics * Hermetic TO-258 Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current
PRODUCT BENEFITS
* Lo...258AA Package Outline
17.65 (.695) 17.39 (.685) to-258aa (Revised 3/1/90) 8.89 (.350) 8.63 (.340)
... |
| Description |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODES 超快软恢复整流二极管
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| File Size |
58.15K /
4 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRE260R FRE260D FRE260H
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| OCR Text |
to-258aa
Features
* 31A, 200V, RDS(on) = 0.080 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance ... |
| Description |
31A/ 200V/ 0.080 Ohm/ Rad Hard/ N-Channel Power MOSFETs
31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs
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| File Size |
48.34K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRE264R FRE264D FRE264H
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| OCR Text |
to-258aa
Features
* 23A, 250V, RDS(on) = 0.130 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance ... |
| Description |
23A/ 250V/ 0.130 Ohm/ Rad Hard/ N-Channel Power MOSFETs
23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs
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| File Size |
47.39K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRE460R FRE460D FRE460H
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| OCR Text |
to-258aa
Features
* 12A, 500V, RDS(on) = 0.410 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance ... |
| Description |
12A/ 500V/ 0.410 Ohm/ Rad Hard/ N-Channel Power MOSFETs
12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs
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| File Size |
47.23K /
6 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FRE9260R FRE9260D FRE9260H
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| OCR Text |
to-258aa
Features
* 19A, -200V, RDS(on) = 0.210 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(SI) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance... |
| Description |
19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, to-258aa
19A/ -200V/ 0.210 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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| File Size |
47.04K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFV260
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| OCR Text |
...
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achiev...258AA
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 2. All dimensions in millime... |
| Description |
TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
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| File Size |
80.91K /
4 Page |
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it Online |
Download Datasheet |
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