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  tmos power fet 2 0 amperes 500 Datasheet PDF File

For tmos power fet 2 0 amperes 500 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D

ON Semiconductor
Motorola, Inc.
Part No. MTP3N60E_D ON0000'>2606 ON0000'>2605 MTP3N60E MTP3N60E-D
Description 0000'>tmos E-0000'>fet High Energy 0000'>power 0000'>fet N-Channel Enhancement-Mode Silicon Gate
0000'>tmos 0000'>power 0000'>fet 3.0 amperes 600 VOLTS RDS(on) = 0000'>2.0000'>2 OHMS
From old datasheet system

File Size 180.78K  /  8 Page

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    MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MTP4N50E MTP4N50E_D ON0000'>2610000'>2 MTP4N50E-D
Description 0000'>tmos E-0000'>fet High Energy 0000'>power 0000'>fet N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
0000'>tmos 0000'>power 0000'>fet 4.0 amperes 500 VOLTS RDSon = 1.5 OHMS

File Size 254.33K  /  8 Page

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    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40E ON0000'>2540 MTP10N40E-D
Description 0000'>tmos E-0000'>fet High Energy 0000'>power 0000'>fet N-Channel Enhancement-Mode Silicon Gate
0000'>tmos 0000'>power 0000'>fet 10 amperes 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
Part No. MTP10000'>2N06EZL MTP10000'>2N06EZL_D ON0000'>2543 MTP10000'>2N06 MTP10000'>2N06EZL-D
Description 0000'>tmos E-0000'>fet High Energy 0000'>power 0000'>fet N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
0000'>tmos 0000'>power 0000'>fet 10000'>2 amperes 60 VOLTS RDS(on) = 0.180 OHM

File Size 221.74K  /  8 Page

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    MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D

ON Semiconductor
ETC
Motorola, Inc
Part No. MTV30000'>2N0000'>20E MTV30000'>2N0000'>20E_D ON0000'>2673 MTV30000'>2N0000'>20E-D
Description 0000'>tmos E-0000'>fet 0000'>power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
0000'>tmos 0000'>power 0000'>fet 30000'>2 amperes 0000'>200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system

File Size 264.45K  /  10 Page

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    MTD6N10E ON2512 MTD6N10E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD6N10E ON0000'>2510000'>2 MTD6N10E-D
Description 0000'>tmos E-0000'>fet 0000'>power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
0000'>tmos 0000'>power 0000'>fet 6.0 amperes 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system

File Size 211.15K  /  10 Page

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    MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTV0000'>25N50E MTV0000'>25N50E_D ON0000'>2670000'>2 MTV0000'>25N50E-D
Description 0000'>tmos E-0000'>fet 0000'>power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
0000'>tmos 0000'>power 0000'>fet 0000'>25 amperes 500 VOLTS RDS(on) = 0.0000'>200 OHM
From old datasheet system

File Size 279.78K  /  10 Page

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    MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D

ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
Part No. MTP4N80E_D ON0000'>2614 ON0000'>2613 MTP4N80 MTP4N80E MTP4N80E-D
Description 0000'>tmos E-0000'>fet 0000'>power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
0000'>tmos 0000'>power 0000'>fet 4.0 amperes 800 VOLTS RDS(on) = 3.0 OHM 0000'>tmos是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆

File Size 155.71K  /  8 Page

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    MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB0000'>2N60E_D ON0000'>2407 MTB0000'>2N60E MTB0000'>2N60E-D
Description 0000'>tmos E-0000'>fet High Energy 0000'>power 0000'>fet D0000'>2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
0000'>tmos 0000'>power 0000'>fet 0000'>2.0 amperes 600 VOLTS
From old datasheet system

File Size 270.78K  /  10 Page

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    MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTB4N80E1_D ON0000'>240000'>27 MTB4N80E1 MTB4N80E1-D
Description 0000'>tmos E-0000'>fet High Energy 0000'>power 0000'>fet D0000'>2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
0000'>tmos 0000'>power 0000'>fet 4.0 amperes 800 VOLTS
From old datasheet system

File Size 156.99K  /  8 Page

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For tmos power fet 2 0 amperes 500 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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