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    HER1001G HER1002G HER1003G HER1004G HER1005G HER1006G HER1007G HER1008G

Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co., Ltd.
Part No. HER1001G HER1002G HER1003G HER1004G HER1005G HER1006G HER1007G HER1008G
OCR Text ...ohm 22pf 2. Rise Time=10ns max. sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 10 8 FIG.3- TYPICAL REVERSE CHARACTERISTICS 1000 INS...
Description Rectifier: High Efficient
10.0 AMPS. Glass Passivated High Efficient Rectifiers

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    SF1004G-Q1

Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co., Ltd.
ETC
Part No. SF1004G-Q1
OCR Text ...ohm 22pf 2. Rise Time=10ns max. sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm AVERAGE FORWARD CURRENT. (A) 10 8 FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.3- TYPICAL REVERSE CHARACTERISTICS 1000 ...
Description 10.0 AMPS. Glass Passivated Super Fast Rectifiers

File Size 88.14K  /  2 Page

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    SF1004G SF1001G SF1002G SF1008G SF1007G SF1006G SF1005G SF1003G

List of Unclassifed Man...
Taiwan Semiconductor
ETC[ETC]
List of Unclassifed Manufacturers
Part No. SF1004G SF1001G SF1002G SF1008G SF1007G SF1006G SF1005G SF1003G
OCR Text ...ohm 22pf 2. Rise Time=10ns max. sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 20 16 12 8 4 0 FIG.3- TYPICAL REVERSE CHARACTERISTICS 1...
Description Rectifier: Superfast
(SF1001G - SF1008G) 10.0 AMPS. Glass Passivated Super Fast Rectifiers

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    FRA1601G FRA1602G FRA1603G FRA1604G FRA1607G FRA1605G FRA1606G

Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
Part No. FRA1601G FRA1602G FRA1603G FRA1604G FRA1607G FRA1605G FRA1606G
OCR Text ...ohm 22pf 2. Rise Time=10ns max. sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm AVERAGE FORWARD CURRENT. (A) 20.0 16.0 12.0 8.0 4.0 0 FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.5- TYPICAL REVERSE CHAR...
Description 16.0 AMPS. Glass Passivated Fast Recovery Rectifiers 16.0安培。玻璃钝化快恢复二极

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    2SK3491 2SK3491TP-FA

Sanyo Semicon Device
Part No. 2SK3491 2SK3491TP-FA
OCR Text ...e Voltage Drain Current Gate-to-sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay T...
Description Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Ultrahigh-Speed Switching Applications

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    2SK3495

Sanyo Semicon Device
Part No. 2SK3495
OCR Text ...e Voltage Drain Current Gate-to-sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VG...
Description N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

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    2SK1520 2SK1519

HITACHI[Hitachi Semiconductor]
Part No. 2SK1520 2SK1519
OCR Text ...1520 Reverse Drain Current vs. sourse to Drain Voltage 50 Reverse Dratin Current IDR (A) Pulse Test 40 30 20 10 VGS = 0, -5 V 10 V 0 0 0.4 0.8 1.6 2.0 1.2 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedanc...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

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    http://
TSC[Taiwan Semiconductor Company, Ltd]
Part No. HT16 HT12 HT14 HT13 HT17 HT11 HT18 HT15
OCR Text ...ohm 22pf 2. Rise Time=10ns max. sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm 0 0 25 50 75 100 125 150 175 o AMBIENT TEMPERATURE. ( C) FIG.3- TYPICAL REVERSE CHARACTERISTICS 1000 FIG.4- TYPICAL FORWARD C...
Description 1.0 AMP. High Efficient Rectifiers

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    HITACHI[Hitachi Semiconductor]
Part No. 2SK1527 2SK1526
OCR Text ...1527 Reverse Drain Current vs. sourse to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 20 10 V VGS = 0, -5 V 10 0 0 2.0 0.4 0.8 1.6 1.2 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance...
Description    Silicon N-Channel MOS FET

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    2SK2631

SANYO[Sanyo Semicon Device]
Part No. 2SK2631
OCR Text ...ID VDD=200V VGS=15V Gate-to-sourse Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 IT02487 3 2 td (off) tf td(on) 10 7 5 tr 3 0.1 2 3 5 7 1.0 2 IT02488 Total Gate Charge, Qg -- nC 10 7 5 3...
Description N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

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