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				Alpha & Omega Semiconductor
Part No.	AOK30B135W1
OCR Text	....5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d figure 21 : normalized maximum transient thermal impedance fo r igbt 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resis...
Description	IGBT with Anti-Parallel Diode IGBTs
File Size	533.88K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AOK20B120E2
OCR Text	....5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resistance pulse width (s) figure 22: normalized maximum transient thermal i...
Description	IGBT with Anti-Parallel Diode IGBTs
File Size	516.61K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDC6305N FDC6305NNL FDC6305NQ
OCR Text	...sed 8 p d power dissipation for single operation (note 1a) 0.96 w (note 1b) 0.9 (note 1c) 0.7 t j , t stg operating and storage junction tem...turn-on delay time 5 15 ns t r turn-on rise time 8.5 17 ns t d(off) turn-off delay time 11 20 ns t f...
Description	Dual N-Channel 2.5V Specified PowerTrench TM MOSFET Dual N-Channel 2.5V Specified PowerTrench MOSFET
File Size	68.51K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AOK20B120E1
OCR Text	....1 , 0. 05 , 0. 02 , 0. 01 , single pulse single pulse t on t p d 0. 001 0. 01 0.1 1 1e- 06 1e- 05 0.0001 0. 001 0. 01 0.1 1 z jc normalized transient thermal resistance pulse width (s) figure 22 : normalized maximum transient thermal...
Description	IGBT with Anti-Parallel Diode IGBTs
File Size	713.91K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AOK20B120D1
OCR Text	....5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d figure 21 : normalized maximum transient thermal impedance fo r igbt 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resis...
Description	IGBT with Anti-Parallel Diode IGBTs
File Size	540.35K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	11P06
OCR Text	...ate-source voltage 25 v e as single pulsed avalanche energy (note 2) 160 mj i ar avalanche current (note 1) -11.4 a e ar repetitive avala...turn-on delay time v dd = -30 v, i d = -5.7 a, r g = 25 ? ...
Description	Search --To FQB11P06
File Size	688.57K / 9 Page	View it Online	Download Datasheet

				Power-One
Part No.	FE5A-1D-0 FE5A-1J-0 FE5A-1G-0 FE5A-1F-0 FE5A-1E-0 FE5A-1H-0
OCR Text	... no minimum load required ? single-wire current sharing ? current limit and over-voltage protection ? full power up to 50o c ? ...turn-on or turn-off. less than 2% for 50% to 100% load step. start-up time: less than 3 seconds ...
Description	High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-MSOP; Temperature Range: -40 to 125C; Container: Tape and Reel High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-DFN; Temperature Range: -40 to 125C; Container: Tape and Reel
File Size	150.91K / 3 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO6409
OCR Text	...=25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd. ao6409, ao6409l typical electrical and thermal characteristics 0 5 10 15 20 25 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	158.09K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AOK18N65
OCR Text	...17 3.3 avalanche current c 595 single pulsed avalanche energy g 1190 parameter maximum lead temperature for soldering purpose, 1/8" from c...turn-on delaytime turn-off delaytime v gs =10v, v ds =325v, i d =18a, r g =25 gate resistance v gs ...
Description	Single HV MOSFETs (500V - 1000V)
File Size	301.39K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AOUS66923
OCR Text	...ional heatsinking is used. c. single pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in f...
Description	Single MV MOSFETs (40V - 400V)
File Size	344.90K / 6 Page	View it Online	Download Datasheet

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