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Kersemi Electronic Co., Ltd.
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| Part No. |
AUIRFR1010Z
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| OCR Text |
...extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features com- bine to make this design an ex... |
| Description |
Advanced Process Technology
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| File Size |
4,495.64K /
11 Page |
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it Online |
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Fairchild Semiconductor Corporation
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| Part No. |
BDW94CF
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| OCR Text |
silicon Transistor
July 2005
BDW94CF
PNP Epitaxial silicon Transistor
Power Linear and Switching Application
* Power Darlington TR * Complement to BDW93CF Respectively
1
TO-220F 2.Collector 3.Emitter
1.Base
Absolute Max... |
| Description |
PNP Epitaxial silicon Transistor
From old datasheet system
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| File Size |
414.57K /
4 Page |
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it Online |
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| Part No. |
BFT46_CNV_2
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| OCR Text |
silicon FET
Product specification File under Discrete Semiconductors, SC07 December 1997
Philips Semiconductors
Product specification
N-channel silicon FET
DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field... |
| Description |
From old datasheet system
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| File Size |
44.08K /
9 Page |
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it Online |
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| Part No. |
BU2515DX_1
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| OCR Text |
silicon Diffused Power Transistor
BU2515DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection cir... |
| Description |
From old datasheet system
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| File Size |
51.01K /
7 Page |
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it Online |
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| Part No. |
BU2532AW_1
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| OCR Text |
silicon Diffused Power Transistor
BU2532AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.
... |
| Description |
From old datasheet system
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| File Size |
45.07K /
6 Page |
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it Online |
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| Part No. |
BUJ105A_2
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| OCR Text |
silicon Diffused Power Transistor
BUJ105A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, ... |
| Description |
From old datasheet system
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| File Size |
53.72K /
7 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPN11006NL
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| OCR Text |
silicon n-channel mos (u-mos -h) tpn11006nl tpn11006nl tpn11006nl tpn11006nl start of commercial production 2013-05 1. 1. 1. 1. applications applications applications applications ? switching voltage regulators ? dc-dc converters ? mot... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
235.66K /
9 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPH4R606NH
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| OCR Text |
silicon n-channel mos (u-mos -h) tph4r606nh tph4r606nh tph4r606nh tph4r606nh start of commercial production 2011-11 1. 1. 1. 1. applications applications applications applications ? switching voltage regulators ? motor drivers ? dc-dc ... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
239.17K /
9 Page |
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it Online |
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