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  rg-188 Datasheet PDF File

For rg-188 Found Datasheets File :: 524    Search Time::1.266ms    
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    IT122 LSIT120-2 IT120 IT120A IT121

Linear Systems
LINEAR[Linear Integrated Systems]
Part No. IT122 LSIT120-2 IT120 IT120A IT121
OCR Text ... IC = 100A VCE = 5V BW = 200Hz, RG = 10 K f=1KHz Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 * TEL: (510) 490-9160...188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 ...
Description Monolithic Dual, NPN Transistor
MONOLITHIC DUAL NPN TRANSISTORS

File Size 26.02K  /  2 Page

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    IPB04N03L IPP04N03L

INFINEON[Infineon Technologies AG]
Part No. IPB04N03L IPP04N03L
OCR Text ... Unit g fs Ciss Coss Crss RG t d(on) tr t d(off) tf V DS2*I D*RDS(on)max, ID=80A V GS=0V, V DS=25V, f=1MHz 11.5 - S 3900 pF 1520 420 19 30 81.3 28.3 ns V DD=15V, VGS=10V, ID=20A, RG=2.2 Q gs Q gd Qg Q oss V DD=15...
Description OptiMOS Buck converter series
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.3mOhm, 80A, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Buck converter series
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; Number of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle 的OptiMOS降压转换器系

File Size 455.11K  /  8 Page

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    LS844 LS845 LS843 LS843-5

Linear Integrated Syste...
Linear Systems
LINEAR[Linear Integrated Systems]
Part No. LS844 LS845 LS843 LS843-5
OCR Text ...15V ID= 500A ID= 500A VGS= 0 RG= 10M NBW= 6Hz ID= 500A f= 1kHz ID= 500A f= 10Hz NF en en Figure Voltage Voltage CAPACITANCE Input R...188 (4.78) 0.197 (5.00) S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.228 (5.79) 0.244 (6...
Description ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

File Size 29.85K  /  2 Page

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    IRF7604

International Rectifier
Part No. IRF7604
OCR Text ...10V 53 --- ID = -2.4A ns 31 --- RG = 6.0 38 --- RD = 4.0, See Fig. 10 590 --- VGS = 0V 330 --- pF VDS = -15V 170 --- = 1.0MHz, See Fig. 5 ...188 .0 16 0 .1 20 .1 98 .0 26 6 0 .6 5 B A S IC 0 .3 3 B A S IC 2.9 5 4 .78 0 .4 1 0 3 .0 5 5 .03...
Description Power MOSFET(Vdss=-20V/ Rds(on)=0.09ohm)
Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)

File Size 130.78K  /  8 Page

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    IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR
OCR Text ...0V, starting TJ = 25C, L =117mH RG = 25, I AS = 1.7A. (See Figure 11) Pulse width 300s; duty cycle 2%. Uses IRFBF20 data and test con...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET(减振钢板基本\u003d 900V,的Rds(on)\u003d 8.0ohm,身份证\u003d 1.7A
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 307.93K  /  10 Page

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    IRFZ44EL IRFZ44ES

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44EL IRFZ44ES
OCR Text ...- VDD = 30V --- ID = 29A ns --- RG = 15 --- RD = 1.1, See Fig. 10 Between lead, --- nH and center of die contact --- VGS = 0V --- pF VDS = ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.8 9 (.350) REF. 1.78 (.070) 1.27 (.050) ...
Description MOV 250V RMS 17MM HIGH ENERGY 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 0.023ohm,身份证\u003d 48A条)
(IRFZ44ES / IRFZ44L) Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

File Size 159.31K  /  10 Page

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    IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR

IRF[International Rectifier]
Part No. IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR
OCR Text ... VDD = 30V --- I D = 51A ns --- RG = 9.1 --- RD = 0.55, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
(IRFZ44L / IRFZ44S) HEXFET Power MOSFET

File Size 320.84K  /  10 Page

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    IRFZ44VL IRFZ44VS IRFZ44VSTRR

IRF[International Rectifier]
Part No. IRFZ44VL IRFZ44VS IRFZ44VSTRR
OCR Text ...- VDD = 30V --- ID = 51A ns --- RG = 9.1 --- RD = 0.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)
(IRFZ44VL / IRFZ44VS) Power MOSFET

File Size 142.96K  /  10 Page

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    PHB130N03T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHB130N03T
OCR Text ... = 15 V; ID = 25 A; VGS = 10 V; RG = 5 Resistive load Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad December 1997 2 Rev 1.200 ...
Description TrenchMOS transistor Standard level FET

File Size 64.83K  /  8 Page

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    PHP130N03T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP130N03T
OCR Text ... = 15 V; ID = 25 A; VGS = 10 V; RG = 5 Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad Septemb...
Description TrenchMOS transistor Standard level FET

File Size 59.18K  /  8 Page

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For rg-188 Found Datasheets File :: 524    Search Time::1.266ms    
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