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Infineon
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| Part No. |
SDA9400
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| OCR Text |
...lsinki) (+35) 9-51051 Berkshire RG 12 8FZ (+44) 1344-39 60 00 Amaroussio/Athen (+30) 1-686 4111 Hong Kong (+852) 2832 05 00 Milano (+39) 2-6676-1 New Delhi 110 014 (+91) 11-46174 47 Bangalore 560 001 (+91) 80-2279874 Mumbai 18 (+91) 22-496 ... |
| Description |
Scanrate Converter
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| File Size |
120.05K /
2 Page |
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it Online |
Download Datasheet
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120_D ON1934 MGY25N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
From old datasheet system
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| File Size |
149.81K /
5 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP20N60u_D ON1866 MGP20N60u ON1865
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
IGBT IN TO-220 20 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
116.77K /
5 Page |
View
it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGW20N120_D ON1922 MGW20N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
Insulated Gate Bipolar Transistor
From old datasheet system
IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS
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| File Size |
135.63K /
5 Page |
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it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MGP2N60D_D ON1870
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| OCR Text |
... Adc, VGE = 15 Vdc, L = 300 mH, RG = 10 , TJ = 125C) Energy losses include "tail" Power Supply, ZO = 50 (VCC = 300 Vdc, IC = 1 2 Ad Vdc Vd ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
4
MGP2N60D/D Motorola IG... |
| Description |
IGBT 1.5 AMPS 600 VOLTS
From old datasheet system
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| File Size |
74.30K /
4 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP11N60E_D ON1851 MGP11N60E ON1848
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
From old datasheet system
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
SHORT CIRCuIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
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| File Size |
116.41K /
5 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP21N60E_D ON1869 MGP21N60E ON1868
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
... |
| Description |
IGBT IN TO-220 21 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
119.33K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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