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SAMSUNG[Samsung semiconductor]
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Part No. |
K7N803645M K7N801845M
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OCR Text |
ntram TM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed speed bin from 167MHz to 150MHz 2. Changed DC Parameters; ICC : from 400mA to 450mA , ISB : from 60mA to 20mA ISB2 : from 50mA to 85mA 1. Changed speed b... |
Description |
256K X 36 & 512K X 18 PIPELINED N-T RAM - TM
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File Size |
393.89K /
18 Page |
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it Online |
Download Datasheet
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SAMSUNG[Samsung semiconductor]
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Part No. |
K7N403601M K7N401801M
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OCR Text |
ntram TM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75 2. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA. Add VDDQ Supply volt... |
Description |
128Kx36 & 256Kx18 Pipelined ntram-TM
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File Size |
263.63K /
17 Page |
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it Online |
Download Datasheet
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GSI Technology, Inc.
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Part No. |
GS882Z36BB-150V GS882Z36BB-150IV
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OCR Text |
...f cypress semiconducto r corp.. ntram is a trademark of samsung el ectronics co.. zbt is a trademark of inte grated device technology, inc. gs882z18/36b(b/d)-xxxv 9mb pipelined and flow through synchronous nbt sram 250 mhz ? 150 mhz 1.8 v... |
Description |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 7.5 ns, PBGA119
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File Size |
549.84K /
33 Page |
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it Online |
Download Datasheet
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Price and Availability
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