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methodology Datasheet PDF File

For methodology Found Datasheets File :: 1655 Search Time::1.344ms
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				NXP Semiconductors
Part No.	A2T20H330W24NR6
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package pea...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	510.19K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T20H160W04N A2T20H160W04NR3
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package pea...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	562.87K / 11 Page	View it Online	Download Datasheet

				ZILOG[Zilog, Inc.]
Part No.	Z8615
OCR Text	...ocedure for Test Conditions and methodology. 3) To measure the POR delay, apply a square wave (amplitude = 4 volts, frequency ~ .5 Hertz) to RESET (Pin 6) then measure the time it takes for Data Strobe (Pin 8) to go high after RESET goes hi...
Description	NMOSZ8 8-BITMCU KEYBOARD CONTROLLER
File Size	52.63K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MMRF2010GN MMRF2010N
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) class 2, passes 2500 v machine model (per eia/jesd22--a115) class a, passes 150 v charge device model (per jesd22--c101) class ii, passes 200 v table 4. m...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	804.96K / 23 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MMRF2007GN MMRF2007N
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 1a, passes 250 v machine model (per eia/jesd22--a115) a, passes 50 v charge device model (per jesd22--c101) i, passes 100 v table 4. moisture sensitivity ...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	394.68K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MMRF2006N MMRF2006NT1
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iii table 4. moisture sensitivity level test methodology rating package pe...
Description	RF LDMOS Wideband Integrated Power Amplifier
File Size	756.63K / 18 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MMRF2005GN MMRF2005N
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 1b, passes 500 v machine model (per eia/jesd22--a115) a, passes 100 v charge device model (per jesd22--c101) ii, passes 200 v table 4. moisture sensitivit...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	730.94K / 18 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MMRF2004NB MMRF2004NBR1
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 1b machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) ii table 4. moisture sensitivity level test methodology rating package pe...
Description	RF LDMOS Wideband Integrated Power Amplifier
File Size	796.67K / 19 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6VP21KHR6 MRF6VP21KHR610
OCR Text	... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (c) Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. MRF6VP21KHR6 ...
Description	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
File Size	700.00K / 11 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6VP41KHR6 MRF6VP41KHSR6
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics...
Description	RF Power Field Effect Transistors
File Size	516.19K / 13 Page	View it Online	Download Datasheet

For methodology Found Datasheets File :: 1655 Search Time::1.344ms
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