| |
|
 |
Infineon
|
| Part No. |
HYS72D32501GR-7-A
|
| OCR Text |
...s or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. edi... |
| Description |
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
|
| File Size |
611.38K /
28 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
DIODES INC
|
| Part No. |
C826
|
| OCR Text |
implanted hyperabrupt tuner diodes issue 2 ? march 94 absolute maximum ratings. parameter symbol max unit reverse voltage v r 25 v forward current i f 200 ma power dissipation at t amb =25c p tot 300 mw junction temperature t j 125 c stora... |
| Description |
100 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
| File Size |
54.11K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Motorola
|
| Part No. |
MRF1047T1
|
| OCR Text |
...ics. The MRF1047T1 is fully-ion implanted with gold metallization and nitride passivation for maximum device r eliability, performance and uniformity.
RF NPN SILICON TRANSISTOR
f = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V
SEMIC... |
| Description |
NPN Silicon Low Noise Transistor
|
| File Size |
186.93K /
12 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|