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  id-11a Datasheet PDF File

For id-11a Found Datasheets File :: 936    Search Time::1.656ms    
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    NTE2921

NTE[NTE Electronics]
Part No. NTE2921
OCR Text ...uous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....11A, RG = 9.1, RD = 11, Note 4 - - - - Between lead, .250in. (6.0) mm from package and center of di...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 28.65K  /  3 Page

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    NTE2970

NTE[NTE Electronics]
Part No. NTE2970
OCR Text ... . . . . . . 30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...11A VGS = 10V, ID = 11A VGS = 10V, ID = 11A Electrical Characteristics (Cont'd): (Tch = +25C unle...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 20.39K  /  2 Page

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    STB11NB40 5418

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STB11NB40 5418
OCR Text ID 10.7 A TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIM...11A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX Uni t V V V A A A W W/ C V/ ns o o o C C (*)...
Description N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的)
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system

File Size 101.13K  /  9 Page

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    RFD3055LE RFD3055LESM RFP3055LE RFD3055

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. RFD3055LE RFD3055LESM RFP3055LE RFD3055
OCR Text .... . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....11A ID = 5A 120 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC 12 ID, DRAIN CURRENT (A) ...
Description 11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
11A 60V 0.107 Ohm Logic Level N-Channel Power MOSFETs

File Size 412.10K  /  8 Page

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    IRFP460 FN2291

INTERSIL[Intersil Corporation]
Part No. IRFP460 FN2291
OCR Text .... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...11A, VGS = 10V (Figures 8, 9) VDS 50V, IDS > 11A (Figure 12) VDD = 250V, ID = 21A, RGS = 4.3, RD = ...
Description From old datasheet system
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET

File Size 55.14K  /  7 Page

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    IRHM8450 IRHM7450

IRF[International Rectifier]
Part No. IRHM8450 IRHM7450
OCR Text ...DSS 500V 500V RDS(on) 0.45 0.45 ID 11A 11A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened ...
Description RADIATION HARDENED POWER MOSFET
REPETITIVE AVALANCHE AND dv/dt RATED

File Size 307.49K  /  12 Page

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    STD17NF03 STD17NF03L STD17NF03L-1

ST Microelectronics
STMICROELECTRONICS [STMicroelectronics]
STMICROELECTRONICS[STMicroelectronics]
Part No. STD17NF03 STD17NF03L STD17NF03L-1
OCR Text ... VDSS 30V RDS(on) <0.05 ID 17A s TYPICAL RDS(on) = 0.038 EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION AD...11A, V DD=15V Unit V V V A A A W W/C V/ns mJ C C (q) Pulse width limited by safe operating are...
Description N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFET
N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET POWER MOSFET
N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET⑩ POWER MOSFET

File Size 263.14K  /  9 Page

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    FDS4672A FDS4672ANL

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS4672A FDS4672ANL
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwi...11A, TJ=125C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 11 A Min 40 Typ Max Units V Off Ch...
Description 40V N-Channel PowerTrench MOSFET

File Size 82.35K  /  5 Page

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    FDS4675 FDS4675NL

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS4675 FDS4675NL
OCR Text ...um Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -...11A VGS = -10V 1.4 1.2 0.03 TA = 125 C 0.02 TA = 25 C 0.01 o o 1 0.8 0.6 -50 -25 0 2...
Description 40V P-Channel PowerTrench MOSFET

File Size 67.49K  /  5 Page

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    IRFP260 IRFP260N IRFP260NPBF

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP260 IRFP260N IRFP260NPBF
OCR Text ...= 200V RDS(on) = 0.04 G S ID = 50A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t...11A 20A BOTTOM 28A TOP VDS L D R IV E R 1000 RG 20V D .U .T IA S tp + - VD D ...
Description 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)\u003d 0.04ohm,身份证\u003d 50A条)

File Size 120.41K  /  8 Page

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For id-11a Found Datasheets File :: 936    Search Time::1.656ms    
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