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fet2-18 Datasheet PDF File

For fet2-18 Found Datasheets File :: 87 Search Time::1.406ms
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				NXP Semiconductors N.V.
Part No.	BUK9MGP-55PTS
OCR Text	...voltage Static characteristics, FET2 RDSon drain-source on-state resistance ratio of drain current to sense current - 21.3 25 m ...18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 S1 D1 ...
Description	Dual TrenchPLUS logic level FET
File Size	344.95K / 20 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	TBB1004
OCR Text	...on are applicable for VHF unit (FET2) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown vo...18 0 50 100 150 Ta (C) 200 0 Ambient Temperature 1 2 3 Drain to Source Volta...
Description	Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	54.12K / 11 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1002 TBB1002BMTL-E TBB100206
OCR Text	...on are applicable for VHF unit (FET2) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown vo...18 25 Max -- -- -- +100 +100 1.0 1.0 22 30 Unit V V V nA nA V V mA mS Test conditions ID = 200 A, VG...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	94.25K / 10 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4940
OCR Text	...20 30 20 5013 25 a max fet1 max fet2 thermal characteristics fet1(intergrated schottky diode)maximum junction-to-ambient a r ja continuous...18 22 18.5 23 m g fs 26 s v sd 0.43 0.5 v i s 3 a c iss 903 1100 pf c oss 225 pf c rss 91 pf r g 1....
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	515.11K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	ENA1030
OCR Text	...0.8mm), PW10s PD(FET1) -- PD(FET2) When mounted on ceramic substrate (1500mm20.8mm), PW10s Allowable Power Dissipation, PD -- W 2.5 2.4 2.3 2.0 2.5 2.3 2.0 1.6 To t al Di t 1.2 1u ss ni ip ati 1...
Description	P-Channel Silicon MOSFET General-Purpose Switching Device Applications
File Size	53.34K / 4 Page	View it Online	Download Datasheet

				NEC
Part No.	UPA2450 UPA2450TL UPA2450TL-E1
OCR Text	...0.1 Single Pulse PD (FET1):PD (FET2) =1:1 DC (2 units) DC (1 unit) 0 0 30 60 120 90 TA - Ambient Temperature - C 150 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOL...
Description	Nch enhancement-type MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	71.58K / 8 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	FW231A FW231A-TL-E
OCR Text	... 1unit p d (fet1) -- p d (fet2) total dissipation mounted on a ceramic board (1500mm 2 5 0.8mm), pw 10s ambient temperature, ta -- c allowable power dissipation, p d -- w allowable power dissipation (fet1), p d -- w a...
Description	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications
File Size	36.91K / 4 Page	View it Online	Download Datasheet

				SANYO
Part No.	FTD2017A
OCR Text	... -- ta p d (fet1) -- p d (fet2) allowable power dissipation, p d -- w allowable power dissipation(fet2), p d -- w allowable power dissipation(fet1), p d -- w it05902 it05903 total dissipation 1 unit mounted on a ceramic boa...
Description	Nch Nch
File Size	31.08K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1016 TBB1016RMTL-E
OCR Text	...ion are applicable for FET1 and FET2 unit (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to sour...18 k 0 22 R G= 10 82 0 0k k k 5 Ambient Temperature Ta (C) * Value on the glass epoxy boa...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
File Size	97.07K / 10 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	UPA1872B UPA1872BGR-9JG
OCR Text	...50 cm2 x 1.1 mm PD (FET1) : PD (FET2) = 1:1 RDS(on) Limited (at VGS = 4.5 V) PW = 10 s 100 s 1 ms 10 ms 100 ms DC (2units) ID - Drain Current - A ID(DC) 1000 Mounted on FR-4 board of 25 cm2 x 1.6 mm 100 Mounted on ceramic board of ...
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	160.74K / 7 Page	View it Online	Download Datasheet

For fet2-18 Found Datasheets File :: 87 Search Time::1.406ms
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