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IRF[International Rectifier]
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| Part No. |
IRHM8Z60 IRHM3Z60 IRHM4Z60 IRHM7Z60
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| OCR Text |
...petitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes ref...24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 15V VDD =15... |
| Description |
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
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| File Size |
119.58K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRLU8113PBF IRLR8113PBF
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| OCR Text |
...-- --- --- --- --- --- 33 30
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Sourc...24V VDS= 15V
C, Capacitance(pF)
10000
4.0
Ciss
1000
3.0
Coss Crss
2.0
1.0
... |
| Description |
HEXFET Power MOSFET
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| File Size |
256.93K /
11 Page |
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it Online |
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意法半导
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| Part No. |
TDE1898R TDE1897R
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| OCR Text |
...e loads. an in- ternal clamping diode enables the fast demag- netization of inductive loads. diagnostic for cpu feedback and extensive use o...24v; t amb = 25 to +85 c, unless otherwise specified) symbol parameter test condition min. typ. max... |
| Description |
0.5A High-Side Driver Industrial Intelligent Power Switch(0.5A 高边驱动工业智能功率开
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| File Size |
113.63K /
12 Page |
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it Online |
Download Datasheet |
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意法半导
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| Part No. |
TDE1898C TDE1897C
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| OCR Text |
...e loads. an in- ternal clamping diode enables the fast demag- netization of inductive loads. diagnostic for cpu feedback and extensive use o...24v; t amb = 25 to +85 c, unless otherwise specified) symbol parameter test condition min. typ. max... |
| Description |
0.5A High-Side Driver Industrial Intelligent Power Switch(0.5A 高边驱动工业智能功率开
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| File Size |
113.41K /
12 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRF7907PBF
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| OCR Text |
...ax. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free
VDSS
30V
RDS(on) max
Q1 16.4m:@VGS = 10V Q2 ...24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 7.0A VDS = 15V, ID... |
| Description |
HEXFETR Power MOSFET
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| File Size |
291.53K /
10 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRF7904PBF
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| OCR Text |
...ax. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free
B
9 T AA9! T AA9! T AA9!
SO-8
T...24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 6.1A VDS = 15V, ID... |
| Description |
Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box
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| File Size |
254.03K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF7862PBF
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| OCR Text |
...cteristics
EAS IAR
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Sourc...24V VDS= 15V
C, Capacitance (pF)
10000 Ciss
3.0
1000
Coss Crss
2.0
1.0
100 1... |
| Description |
HEXFET Power MOSFET
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| File Size |
605.71K /
9 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
http://
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| Part No. |
IRF7811AV IRF7811AVTR
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| OCR Text |
...Continuous Source Current (Body Diode) Pulsed Source Current
A
L = 90C
W C A
Thermal Resistance
Maximum Junction-to-Ambient...24V, VGS = 0V VGS = 20V VDS = 24V, ID = 15A, VGS = 5.0V VGS = 5.0V, VDS < 100mV
d
VDS = VGS, ... |
| Description |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
N-Channel Application-Specific MOSFETs
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| File Size |
120.53K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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