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For cycling Found Datasheets File :: 17473 Search Time::2.172ms
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				Samsung Semiconductor
Part No.	KMM53232004CK
OCR Text	...rrent * ( ras , cas , address cycling @ t rc =min) : standby current ( ras = cas = w =v ih ) : ras only refresh current * ( cas =v ih , ras cycling @ t rc =min) : hyper page mode current * ( ras =v il , cas cycling : t hpc =min)...
Description	32MBx32 DRAM Simm Using 16MBx4
File Size	450.08K / 21 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM53232000CK
OCR Text	...rrent * ( ras , cas , address cycling @ t rc =min) : standby current ( ras = cas = w =v ih ) : ras only refresh current * ( cas =v ih , ras cycling @ t rc =min) : fast page mode current * ( ras =v il , cas cycling : t pc =min) :...
Description	32MBx32 DRAM Simm Using 16MBx4
File Size	403.02K / 20 Page	View it Online	Download Datasheet

				OKI
Part No.	MSM512100 MSM512100L
OCR Text	...disable 0 V VO 5.5 V RAS, CAS cycling, tRC = Min. RAS, CAS = VIH ICC2 RAS, CAS VCC -0.2 V RAS cycling, ICC3 CAS = VIH, tRC = Min. RAS = VIH, ICC5 CAS = VIL, DOUT = enable ICC6 RAS cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tPC ...
Description	From old datasheet system 2,097,152-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
File Size	233.93K / 16 Page	View it Online	Download Datasheet


Part No.	TC59SM704AS-75
OCR Text	...min active precharge command cycling without burst operation 1 bank operation i cc1 ? 80 ? 75 ? 70 3 cke = v ih i cc2 ? 40 ? 35 ? 30 3 standby current t ck = min, cs = v ih , v ih/l = v ih (min) / v il...
Description	SYNCHRONOUS DRAM, PDSO54
File Size	2,430.04K / 49 Page	View it Online	Download Datasheet


Part No.	TC59SM704AFTL-70 TC59SM704AFTL-80 TC59SM716AFTL-70 TC59SM708AFTL-75
OCR Text	...min active precharge command cycling without burst operation 1 bank operation i cc1 ? 80 ? 75 ? 70 3 cke = v ih i cc2 ? 40 ? 35 ? 30 3 standby current t ck = min, cs = v ih , v ih/l = v ih (min) / v il...
Description	32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
File Size	2,439.78K / 49 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	... Operating Current (RAS and CAS cycling @tRC=min.) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3* : RAS-only Refresh Current (CAS=VIH, RAS cycling @tRC=min.) ICC4* : Hyper Page Mode Current (RAS=VIL, CAS, Address cycling @tHPC=min.) ICC5 : St...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...g Current (RAS and CAS, Address cycling @tRC=min.) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.) ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.) IC...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

For cycling Found Datasheets File :: 17473 Search Time::2.172ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |