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				Advanced Power Technology
Part No.	APT26GU30SA APT26GU30K
OCR Text	...-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on ...
Description	MOSFET POWER MOS 7 IGBT
File Size	167.45K / 6 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT30GN60BG APT30GN60B
OCR Text	...-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figur...
Description	IGBT
File Size	392.71K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK856-400IZ
OCR Text	...nt (DC) Total power dissipation clamped energy dissipation MIN. TYP. MAX. UNIT 350 400 500 2.2 20 100 300 V V A W mJ PINNING - TO220AB PIN 1 2 3 tab gate collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c ...
Description	INSULATED GATE BIPOLAR TRANSISTOR PROTECTED LOGIC-LEVEL IGBT
File Size	80.83K / 8 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT150GN60LDQ4G
OCR Text	...thod 3471. 5 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown ...
Description	IGBT w/ anti-parallel diode
File Size	215.62K / 9 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT40GP60J
OCR Text	...-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure24.) 5 Eon2 is the clamped inductive turn-on e...
Description	MOSFET POWER MOS 7 IGBT
File Size	96.82K / 6 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT150GN60J
OCR Text	...thod 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown...
Description	IGBT w/o anti-parallel diode
File Size	297.83K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT40GP90JDQ2
OCR Text	...-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figur...
Description	POWER MOS 7 IGBT
File Size	452.86K / 9 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT50GT60BRDQ2G APT50GT60BRDQ2
OCR Text	...-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figur...
Description	Thunderbolt IGBT
File Size	428.67K / 9 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT150GN60B2G
OCR Text	...thod 3471. 5 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown ...
Description	IGBT w/o anti-parallel diode
File Size	165.96K / 6 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT100GN60LDQ4G
OCR Text	...thod 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown...
Description	IGBT w/ anti-parallel diode
File Size	297.28K / 9 Page	View it Online	Download Datasheet

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