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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K4R881869D K4R571669D
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OCR Text |
...te) command from an ROWA packet causes one of the 512 rows of the selected bank to be loaded to its associated sense amps (two 512 bytes sense amps for DQA and two for DQB). PRER Command: A PRER (precharge) command from
an ROWR packet caus... |
Description |
256/288Mbit RDRAM(D-die)
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File Size |
309.27K /
20 Page |
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it Online |
Download Datasheet |
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INTEL[Intel Corporation]
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Part No. |
87C196KR 87C196KQ 87C196JV 87C196JT 87C196JR 87C196JQ 87C196
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OCR Text |
... BUSWIDTH A positive transition causes a non-maskable interrupt vector through memory location 203EH Used by Intel (GND this pin) Output high during an external memory read indicates the read is an instruction fetch INST is valid throughout... |
Description |
ADVANCED 16-BIT CHMOS MICROCONTROLLER
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File Size |
312.56K /
25 Page |
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it Online |
Download Datasheet |
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INTEL[Intel Corporation]
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Part No. |
87C196KS 87C196KT 87C196
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OCR Text |
... BUSWIDTH A positive transition causes a non maskable interrupt vector through memory location 203EH Output high during an external memory read indicates the read is an instruction fetch INST is valid throughout the bus cycle INST is active... |
Description |
ADVANCED 16-BIT CHMOS MICROCONTROLLER
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File Size |
417.18K /
34 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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