|
|
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
Part No. |
CY7C1371D-100AxI CY7C1371D-100BGI CY7C1373D-100BZI CY7C1373D-133AxI CY7C1371D-100BZC CY7C1371D-100BZI CY7C1373D-100AxC CY7C1373D-100AxI CY7C1371D-100AxC CY7C1373D-133AxC CY7C1371D-133AxI CY7C1373D-100BZC CY7C1371D-133BGC CY7C1371D-133BGI CY7C1371D-133AxC CY7C1373D-100BGC CY7C1373D-133BGC CY7C1373D-133BGxI CY7C1373D-133BZxC CY7C1373D-133BZxI CY7C1373D-133BZI CY7C1373D-133BGxC CY7C1373D-133BZC CY7C1371D-133BGxC CY7C1371D-100BGxI ICY7C1373D-100BGxI CY7C1373D-100BZxC CY7C1371D-100BZxC CY7C1371D-100BGC ICY7C1373D-100BGI
|
Description |
18-Mbit (512K x 36/1M x 18) flow-through SRAM with NoBLTM Architecture 1M x 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) flow-through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) flow-through SRAM with NoBLTM Architecture 1M x 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) flow-through SRAM with NoBLTM Architecture 1M x 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) flow-through SRAM with NoBLTM Architecture 512K x 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) flow-through SRAM with NoBLTM Architecture 1M x 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) flow-through SRAM with NoBLTM Architecture 1M x 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) flow-through SRAM with NoBLTM Architecture 512K x 36 ZBT SRAM, 8.5 ns, PBGA119
|
File Size |
449.66K /
30 Page |
View
it Online |
Download Datasheet |
|
|
|
http:// Intel, Corp. PROM Intel Corp. Intel Corporation
|
Part No. |
E28F002Bx-B80 E28F002Bx-T60 E28F002Bx-T80 E28F002Bx-B120 E28F002Bx-T120 E28F002Bx-B60 28F200Bx-TB E28F200Bx-B80 TB28F200Bx-B80 TE28F002Bx-B80 TE28F200Bx-B80 PA28F200Bx-B80 E28F200Bx-B60 E28F200Bx-T80 TE28F002Bx-T80 TB28F200Bx-T80 TE28F200Bx-T80 PA28F200Bx-T80 E28F200Bx-B120 PA28F200Bx-B120 PA28F200Bx-B60 E28F200Bx-T120 PA28F200Bx-T60 E28F200Bx-T60 PA28F200Bx-T120
|
Description |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200Bx - B 2兆位28K的1656K × 8)启动块闪存系列 ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes 28F002Bx-B - 2-MBIT (128K x 16. 256k x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256k x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256k x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16/ 256k x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
File Size |
575.71K /
48 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|