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Infineon Technologies A...
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Part No. |
IPB60R080P7
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OCR Text |
...1 0.080 - w v gs =10v, i d =11.8a, t j =25c v gs =10v, i d =11.8a, t j =150c gate resistance r g - 4.8 - w f =1mhz,opendrain table5...600vcoolmosap7powertransistor ipb60r080p7 rev.2.0,2017-09-29 final data sheet table7rev... |
Description |
600v CoolMOSa P7 Power Transistor
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File Size |
1,312.59K /
14 Page |
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Infineon
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Part No. |
ILA03N60 ILB03N60E3045A ILD03N60 ILP03N60
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OCR Text |
...anche energy, single pulse IC=0.8a, VCE=50V Gate-emitter voltage Reverse diode dv/dt IC 3A, VCE 450V, Tjmax 150C Power dissipation (TC = 25C) Operating junction and storage temperature Soldering temperature for 10 s (according to JEDEC J... |
Description |
IGBTs & DuoPacks - 3A / 600v LightMOS in TO220 FullPak IGBTs & DuoPacks - 3A / 600v LightMOS in TO263 IGBTs & DuoPacks - 3A / 600v LightMOS in DPak
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File Size |
310.73K /
15 Page |
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BI
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Part No. |
7721
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OCR Text |
...BENEFITS
22A 500V IGBTs with 8a 600v ultrafast diodes 32A 600v IGBTs with 25A 600v hyperfast diodes
* Saves significant space and assembly time * Modern design reduces heatsink cost * Low cost * Thin package (.200) easily fits between... |
Description |
H Bridge Power Module
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File Size |
114.93K /
5 Page |
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it Online |
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Price and Availability
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