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  860-928 Datasheet PDF File

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    sirenza.com
Part No. SLD-1026Z
OCR Text ...IM5 -60 -65 -70 0 820 840 860 880 900 920 Frequency (MHz) -60 940 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Pout (W PEP) CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W 60 0 CW Gain, Efficiency vs Pout Vdd=28V, Idq=30mA...
Description 3 Watt Discrete LDMOS Device Plastic Surface Mount Package

File Size 823.65K  /  21 Page

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    THN6501E THN6501S THN6501U THN6501Z

AUK corp
Part No. THN6501E THN6501S THN6501U THN6501Z
OCR Text ...713 0.698 / 163.448 0.704 / 158.860 0.718 / 154.220 0.731 / 150.120 0.748 / 145.931 0.751 / 140.712 S(2,1) 6.948 / 101.846 4.872 / 88.860 3....928 / 61.229 / 59.526 / 57.649 / 55.823 / 53.932 S(2,2) 0.322 / -145.010 0.315 / -154.673 0.319 / -1...
Description SiGe NPN Transistor

File Size 230.28K  /  15 Page

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    THN6501 THN6501E THN6501Z THN6501U THN6501S

TACHYONICS[Tachyonics CO,. LTD]
Part No. THN6501 THN6501E THN6501Z THN6501U THN6501S
OCR Text ...713 0.698 / 163.448 0.704 / 158.860 0.718 / 154.220 0.731 / 150.120 0.748 / 145.931 0.751 / 140.712 S(2,1) 6.948 / 101.846 4.872 / 88.860 3....928 / 61.229 / 59.526 / 57.649 / 55.823 / 53.932 S(2,2) 0.322 / -145.010 0.315 / -154.673 0.319 / -1...
Description NPN SiGe RF TRANSISTOR

File Size 227.84K  /  15 Page

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    CLV0910A CLV0910AA1

Z-Communications, Inc
Part No. CLV0910A CLV0910AA1
OCR Text ...ni-14s tuning curve, typ. 840 860 880 900 920 940 960 00.511.522.53 c c c tuning voltage (vdc) frequency (mhz) power curve, typ. footprint voltage-controlled oscillator surface mount module clv0910a a1 rev power output (dbm) 0.030 ...
Description Voltage-Controlled Oscillator Surface Mount Module

File Size 73.35K  /  2 Page

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    SIRENZA[SIRENZA MICRODEVICES]
Part No. SLD-1026Z
OCR Text ...IM5 -60 -65 -70 0 820 840 860 880 900 920 Frequency (MHz) -60 940 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Pout (W PEP) CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=30mA, Pout=3W 60 0 CW Gain, Efficiency vs Pout Vdd=28V, Idq=30mA...
Description 3 Watt Discrete LDMOS Device Plastic Surface Mount Package

File Size 819.50K  /  21 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RD12MVS1
OCR Text ...0.810 0.836 0.858 0.855 0.859 0.860 0.886 0.898 0.898 0.893 0.903 0.910 0.917 0.925 0.922 0.922 0.939 0.939 0.938 0.930 0.932 0.946 0.949 0....928 0.934 0.932 0.936 0.932 0.935 0.939 0.939 0.943 0.945 0.943 0.939 0.943 0.948 0.951 0.953 0.952 ...
Description RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

File Size 428.96K  /  7 Page

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    FLL21E090IK

Eudyna Devices Inc
Part No. FLL21E090IK
OCR Text ...0.425 -167.4 2.25 0.479 166.4 4.860 18.9 0.016 8.9 0.513 160.9 2.3 0.624 151.2 3.765 -4.5 0.015 -20.0 0.577 141.9 0 2.35 0.710 141.0 2.960 -22.9 0.015 -45.9 0.626 127.9 2.4 0.764 133.4 2.395 -38.2 0.014 -65.6 0.665 116.9 2.5 0.822 121.6 1.6...
Description High Voltage - High Power GaAs FET

File Size 334.40K  /  6 Page

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    FLK107XV

Eudyna Devices Inc
Part No. FLK107XV
OCR Text ...ia-Hole Die Thickness: 6020m 860 (Via-Hole) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com...
Description GaAs FET & HEMT Chips

File Size 58.38K  /  4 Page

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    NE71300 NE71300L NE71300M NE71300N

Duracell
NEC
California Eastern Labs
Part No. NE71300 NE71300L NE71300M NE71300N
OCR Text ...0.807 9.101 8.207 7.642 7.198 6.860 5.846 5.230 3.865 2.913 2.369 1.496 1.561 0.919 Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 m) long each wire. Drain: Total 739 wire(s), 2 per bond p...
Description    LOW NOISE L TO K-BAND GaAs MESFET

File Size 90.81K  /  8 Page

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