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    APT5014B2LC APT5014LLC APT5014

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5014B2LC APT5014LLC APT5014
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

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    APT5014B2VR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5014B2VR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm

File Size 61.78K  /  4 Page

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    APT5014LVR

ADPOW[Advanced Power Technology]
Part No. APT5014LVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.64K  /  4 Page

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    APT5015 APT5015BVR

ADPOW[Advanced Power Technology]
Part No. APT5015 APT5015BVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 32A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5017BVFR

ADPOW[Advanced Power Technology]
Part No. APT5017BVFR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.45K  /  4 Page

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    APT5017BVR

ADPOW[Advanced Power Technology]
Part No. APT5017BVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.07K  /  4 Page

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    APT5017 APT5017SVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5017 APT5017SVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.55K  /  4 Page

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    APT5019HVR

ADPOW[Advanced Power Technology]
Part No. APT5019HVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 24A 0.190 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5020BVFR

ADPOW[Advanced Power Technology]
Part No. APT5020BVFR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5020BVR

ADPOW[Advanced Power Technology]
Part No. APT5020BVR
OCR Text ...he following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
Description POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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