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  80ns Datasheet PDF File

For 80ns Found Datasheets File :: 724    Search Time::1.016ms    
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    Tripath Technology
Part No. RB-TA3020-1 RB-TA3020-2
OCR Text ... This amplifier board is set to 80ns, and the table below shows the BBM values for various settings of the jumpers (Figure 7). BM1 BM0 Delay 0 1 0 1 120nS 80ns 40nS 0nS J3 0 1) 2) 3) 4) 0 0 1 1 J2 0 1 1 BB delay BBM1 No...
Description (RB-TA3020-1/-2) CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD

File Size 761.02K  /  20 Page

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    K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M
OCR Text ...0s(Max.) - Serial Page Access : 80ns(Min.) * Fast Write Cycle Time - Program time : 250s(typ.) - Block Erase time : 2ms (typ.) * Command/Address/Data Multiplexed I/O port * Hardware Data Protection - Program/Erase Lockout During Power Trans...
Description -2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 440.97K  /  25 Page

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    Macronix International Co., Ltd.
Part No. 23L3214-90 23L3214-70
OCR Text ...3214XI-10 MX23L3214XI-90G Speed 80ns 90ns 70ns 90ns 100ns 90ns Package 48 pin TSOP 48 pin TSOP 48 ball mini BGA 48 ball mini BGA 48 ball mini BGA 48 ball mini BGA Grade Industrial Industrial Industrial Industrial Industrial Industrial Remar...
Description 32M-BIT MASK ROM

File Size 432.65K  /  9 Page

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    http://
Samsung
Part No. K8D1716UBB K8D1716UTB K8D1716UTB-TC09 K8D1716UTB-YI09 K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09
OCR Text ...her bank. Access times of 70ns, 80ns and 90ns are available for the device. The devices fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or ...
Description 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
16M Dual Bank NOR Flash Memory

File Size 486.90K  /  40 Page

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    MT28F322D18

Micron Technology, Inc.
Part No. MT28F322D18
OCR Text ...ity)  random access time: 70ns/80ns @ 1.70v v cc  burst mode read access (mt28f322d20) ? max clock rate: 54 mhz ( t clk = 18.5ns) ? burst latency: 70ns @ 1.80v v cc and 54 mhz ? t aclk: 17ns @ 1.80v v cc and 54 mhz  page mode read acce...
Description FLASH MEMORY 闪存

File Size 503.30K  /  44 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM29N16000ATS
OCR Text ... s(Max.) - Serial Page Access : 80ns(Min.) * Fast Write Cycle Time - Program time : 250 s(typ.) - Block Erase time : 2ms (typ.) * Command/Address/Data Multiplexed I/O port * Hardware Data Protection - Program/Erase Lockout During Power Tran...
Description 2M x 8 Bit NAND Flash Memory(2M x 8NAND闪速存储器)

File Size 253.10K  /  21 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM29N16000AT KM29N16000AIT
OCR Text ... s(Max.) - Serial Page Access : 80ns(Min.) * Fast Write Cycle Time - Program time : 250 s(typ.) - Block Erase time : 2ms (typ.) * Command/Address/Data Multiplexed I/O port * Hardware Data Protection - Program/Erase Lockout During Power Tran...
Description 2Mx8 Bit NAND Flash Memory(2Mx8NAND闪速存储器)

File Size 268.49K  /  23 Page

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    Tripath
Part No. RB-TK2350
OCR Text ... This amplifier board is set to 80ns, and the table below shows the BBM values for various settings of the jumpers (Figure 7). BBM1 BBM0 Delay 120nS 80ns 1) 2) 0 0 0 1 Note: The default delay jumper setting is 80ns. Figur...
Description Reference Board

File Size 772.27K  /  24 Page

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